公开(公告)号：US20230329007A1

公开(公告)日：2023-10-12

申请号：US18176750

申请日：2023-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hajun SUNG ,  Youngjae Kang ,  Bonwon Koo ,  Yongyoung Park ,  Dongho Ahn ,  Kiyeon Yang ,  Wooyoung Yang ,  Changseung Lee ,  Minwoo Choi

IPC: H10B63/00 ,  H10B61/00

CPC classification number: H10B63/24 ,  H10B61/10 ,  H10B63/80

Abstract: A chalcogenide material according to one embodiment includes germanium (Ge); arsenic (As); sulfur (S); selenium (Se), and at least one group III metal selected from indium (In), gallium (Ga), and aluminum (Al), wherein the content of the Ge may be greater than about 10 at % and less than or equal to about 30 at %, the content of the As may be greater than about 30 at % and less than or equal to about 50 at %, the content of Se is greater than about 20 at % and less than or equal to about 60 at %, the content of S is greater than about 0.5 at % and less than or equal to about 10 at %, and the content of the group III metal may be in the range of 0.5 at % to 10 at %.