公开(公告)号：US12014985B2

公开(公告)日：2024-06-18

申请号：US18342145

申请日：2023-06-27

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Youngjae Kang ,  SangWoon Lee ,  Joungeun Yoo ,  Duseop Yoon

IPC: H01L23/532 ,  H01L21/285 ,  H01L23/528 ,  H01L29/45

CPC classification number: H01L23/53204 ,  H01L21/2855 ,  H01L23/5283 ,  H01L29/45

Abstract: A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm:

Mn+1AXn  Formula 1

In Formula 1, M, A, X, and n are as described in the specification.

公开(公告)号：US11728270B2

公开(公告)日：2023-08-15

申请号：US17384023

申请日：2021-07-23

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY—ACADEMIC COOPERATION FOUNDATION

Inventor： Youngjae Kang ,  SangWoon Lee ,  Joungeun Yoo ,  Duseop Yoon

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/285 ,  H01L29/45

CPC classification number: H01L23/53204 ,  H01L21/2855 ,  H01L23/5283 ,  H01L29/45

Abstract: A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm:

Mn+1AXn  Formula 1

In Formula 1, M, A, X, and n are as described in the specification.

公开(公告)号：US20240107778A1

公开(公告)日：2024-03-28

申请号：US18298642

申请日：2023-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseung LEE ,  Kiyeon Yang ,  Youngjae Kang ,  Hajun Sung ,  Dongho Ahn

IPC: H10B63/10 ,  H10B63/00

CPC classification number: H10B63/10 ,  H10B63/24 ,  H10B63/80

Abstract: A phase-change memory structure includes lower and upper electrodes spaced apart from each other, and a phase-change material stack between the lower and upper electrodes. The phase-change material stack includes a plurality of phase-change layers, at least two phase-change layers of the plurality of phase-change layers have different phase-change temperatures, and a plurality of barrier layers between the plurality of phase-change layers The at least two phase-change layers of the plurality of phase-change layers have different thicknesses.

公开(公告)号：US20240065118A1

公开(公告)日：2024-02-22

申请号：US18068821

申请日：2022-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hajun SUNG ,  Youngjae Kang ,  Changyup Park ,  Kiyeon Yang ,  Wooyoung Yang ,  Changseung Lee ,  Minwoo Choi

IPC: H10N70/20 ,  H10N70/00 ,  H10B63/00

CPC classification number: H10N70/231 ,  H10N70/861 ,  H10N70/8828 ,  H10N70/8845 ,  H10B63/84

Abstract: Provided are a phase change heterostructure and a phase change memory device including the same. The phase change memory device including the phase change heterostructure may include a plurality of memory cells. Each of the plurality of memory cells may include a first electrode and a second electrode, which may be spaced apart from each other, and a phase change heterostructure between the first electrode and the second electrode. The phase change heterostructure may include a plurality of phase change material layers and a plurality of thermal barrier layers alternately stacked on each other. A material of the plurality of thermal barrier layers have a thermal conductivity lower than a materials of the plurality of phase change material layers.

公开(公告)号：US11830814B2

公开(公告)日：2023-11-28

申请号：US17376624

申请日：2021-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joungeun Yoo ,  Youngjae Kang ,  Duseop Yoon

IPC: H01L23/532 ,  C22C29/14

CPC classification number: H01L23/53209 ,  C22C29/14 ,  H01L23/53257 ,  B22F2302/35

Abstract: Provided are a wiring material for a semiconductor device, the wiring material including a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14, a wiring for a semiconductor device including the same, and a semiconductor device including the wiring containing the wiring material.

公开(公告)号：US20230329007A1

公开(公告)日：2023-10-12

申请号：US18176750

申请日：2023-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hajun SUNG ,  Youngjae Kang ,  Bonwon Koo ,  Yongyoung Park ,  Dongho Ahn ,  Kiyeon Yang ,  Wooyoung Yang ,  Changseung Lee ,  Minwoo Choi

IPC: H10B63/00 ,  H10B61/00

CPC classification number: H10B63/24 ,  H10B61/10 ,  H10B63/80

Abstract: A chalcogenide material according to one embodiment includes germanium (Ge); arsenic (As); sulfur (S); selenium (Se), and at least one group III metal selected from indium (In), gallium (Ga), and aluminum (Al), wherein the content of the Ge may be greater than about 10 at % and less than or equal to about 30 at %, the content of the As may be greater than about 30 at % and less than or equal to about 50 at %, the content of Se is greater than about 20 at % and less than or equal to about 60 at %, the content of S is greater than about 0.5 at % and less than or equal to about 10 at %, and the content of the group III metal may be in the range of 0.5 at % to 10 at %.