公开(公告)号：US20220020445A1

公开(公告)日：2022-01-20

申请号：US17398434

申请日：2021-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungryun Kim ,  Yoonna Oh ,  Hohyun Shin ,  Jaeho Lee

IPC: G11C29/18 ,  G11C29/00 ,  G11C29/42 ,  G11C29/44

Abstract: A semiconductor memory device comprises a memory cell array including segments disposed at corresponding intersections of row and column blocks, each row block including dynamic memory cells coupled to word-lines and bit-lines, a row decoder that activates a first word-line of a first row block in response to a row address, determines whether the first row block is a master block based on a first fuse information and a second row block is mapped as a slave to the master block, activates a second word-line of the second row block, and outputs a row block information signal, and a column decoder accessing a portion of first memory cells coupled to the first word-line or a portion of second memory cells coupled to the second word-line based on a column address, the row block information signal and a second fuse information.

公开(公告)号：US20210012849A1

公开(公告)日：2021-01-14

申请号：US16795730

申请日：2020-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungryun Kim ,  Yoonna Oh ,  Hohyun Shin ,  Jaeho Lee

IPC: G11C29/18 ,  G11C29/00 ,  G11C29/44 ,  G11C29/42

Abstract: A semiconductor memory device comprises a memory cell array including segments disposed at corresponding intersections of row and column blocks, each row block including dynamic memory cells coupled to word-lines and bit-lines, a row decoder that activates a first word-line of a first row block in response to a row address, determines whether the first row block is a master block based on a first fuse information and a second row block is mapped as a slave to the master block, activates a second word-line of the second row block, and outputs a row block information signal, and a column decoder accessing a portion of first memory cells coupled to the first word-line or a portion of second memory cells coupled to the second word-line based on a column address, the row block information signal and a second fuse information.