公开(公告)号：US20200183618A1

公开(公告)日：2020-06-11

申请号：US16435596

申请日：2019-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Joe

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/10 ,  G11C16/08 ,  G11C11/56

Abstract: A memory device includes a nonvolatile memory cell array having a first string including a first nonvolatile memory cell, and a second string including a second nonvolatile memory cell connected to the first nonvolatile memory cell by a first word line. First data is simultaneously programmed into the first and second memory cells. The first and second strings are electrically connected at respective first ends thereof to a bit line (BL) and electrically connected at respective second ends thereof to a common source line (CSL).