公开(公告)号：USD820962S1

公开(公告)日：2018-06-19

申请号：US29599764

申请日：2017-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Young-Sun Shin ,  Jin-Sun Park ,  Tae-Han Kim

公开(公告)号：US09615041B2

公开(公告)日：2017-04-04

申请号：US14607133

申请日：2015-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Sik Kim ,  Young-Chan Kim ,  Tae-Han Kim ,  Eun-Sub Shim ,  Dong-Joo Yang ,  Min-Seok Oh ,  Moo-Sup Lim

IPC: H04N5/3745 ,  H01L27/30 ,  H01L27/146 ,  H01L27/148

CPC classification number: H04N5/3745 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14812 ,  H01L27/14818 ,  H01L27/307

Abstract: Provided are an image sensor and a method of manufacturing the same. The method may include forming a photo-electric conversion region and a charge storage region in a semiconductor layer; forming a transistor on a front surface of the semiconductor layer; forming a recess by etching a portion of the semiconductor layer between the charge storage region and a rear surface of the semiconductor layer; and forming on a bottom surface of the recess a shield film that blocks light incident on the charge storage region.