公开(公告)号：US20220013467A1

公开(公告)日：2022-01-13

申请号：US17358752

申请日：2021-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang Eun LEE ,  Min Joo LEE ,  Wan Don KIM ,  Hyun Bae LEE

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/528

Abstract: A semiconductor device and a method for fabricating the same. The semiconductor device comprising: a first level wiring disposed at a first metal level, and includes a first line wiring, a first insulating capping film and a first side wall graphene film, the first insulating capping film extending along an upper surface of the first line wiring, and the first side wall graphene film extending along a side wall of the first line wiring; an interlayer insulating film covering the side wall of the first line wiring and a side wall of the first insulating capping film; and a second level wiring disposed at a second metal level higher than the first metal level, and includes a second via connected to the first line wiring, and a second line wiring connected to the second via, wherein the second via penetrates the first insulating capping film.

公开(公告)号：US20210119058A1

公开(公告)日：2021-04-22

申请号：US17114598

申请日：2020-12-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Ho PARK ,  Wan Don KIM ,  Weon Hong KIM ,  Hyeon Jun BAEK ,  Byoung Hoon LEE ,  Jeong Hyuk YIM ,  Sang Jin HYUN

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/51 ,  H01L27/088

Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.