公开(公告)号：US11361829B2

公开(公告)日：2022-06-14

申请号：US16775639

申请日：2020-01-29

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Federico Nardi ,  Won Ho Choi

IPC: G11C16/04 ,  G11C16/26 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11519 ,  H01L27/11556

Abstract: Systems and methods for performing in-storage logic operations using one or more memory cell transistors and a programmable sense amplifier are described. The logic operations may comprise basic Boolean logic operations (e.g., OR and AND operations) or secondary Boolean logic operations (e.g., XOR and IMP operations). The one or more memory cell transistors may be used for storing user data during a first time period and then used for performing a logic operation during a second time period subsequent to the first time period. During the logic operation, a first memory cell transistor of the one or more memory cell transistors may be programmed with a threshold voltage that corresponds with a first input operand value and then a gate voltage bias may be applied to the first memory cell transistor during the logic operation that corresponds with a second input operand value.

公开(公告)号：US10374014B2

公开(公告)日：2019-08-06

申请号：US15869592

申请日：2018-01-12

Applicant: SanDisk Technologies LLC

Inventor： Federico Nardi ,  Christopher J Petti ,  Gerrit Jan Hemink

IPC: G11C11/00 ,  H01L27/24 ,  H01L45/00 ,  G11C13/00 ,  G11C11/56 ,  H01L29/786

Abstract: A non-volatile memory uses phase change memory (PCM) cells in a three dimensional vertical cross-point structure, in which multiple layers of word lines run in a horizontal direction and bit lines run in a vertical direction. The memory cells are located in a recessed region of the word lines and are separated from the bit line by an ovonic threshold switch. A surfactant lining of the word line recess in which the phase change memory material is placed improves stability of the resistance state of the memory cells, allowing for improved multi-state operation.

公开(公告)号：US20190115391A1

公开(公告)日：2019-04-18

申请号：US15869573

申请日：2018-01-12

Applicant: SanDisk Technologies LLC

Inventor： Federico Nardi ,  Christopher J. Petti ,  Gerrit Jan Hemink

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00 ,  G11C11/56

Abstract: A non-volatile memory uses phase change memory (PCM) cells in a three dimensional vertical cross-point structure, in which multiple layers of word lines run in a horizontal direction and bit lines run in a vertical direction. The memory cells are located in a recessed region of the word lines and are separated from the bit line by an ovonic threshold switch. A surfactant lining of the word line recess in which the phase change memory material is placed improves stability of the resistance state of the memory cells, allowing for improved multi-state operation.

公开(公告)号：US20190115071A1

公开(公告)日：2019-04-18

申请号：US15869553

申请日：2018-01-12

Applicant: SanDisk Technologies LLC

Inventor： Federico Nardi ,  Christopher J. Petti ,  Gerrit Jan Hemink

IPC: G11C13/00

Abstract: A non-volatile memory uses phase change memory (PCM) cells in a three dimensional vertical cross-point structure, in which multiple layers of word lines run in a horizontal direction and bit lines run in a vertical direction. The memory cells are located in a recessed region of the word lines and are separated from the bit line by an ovonic threshold switch. A surfactant lining of the word line recess in which the phase change memory material is placed improves stability of the resistance state of the memory cells, allowing for improved multi-state operation.