SYSTEMS AND METHODS FOR ON-DIE CONTROL OF MEMORY COMMAND, TIMING, AND/OR CONTROL SIGNALS

    公开(公告)号:US20190018597A1

    公开(公告)日:2019-01-17

    申请号:US15870390

    申请日:2018-01-12

    Abstract: A sequencer circuit is configured to generate control signals for on-die memory control circuitry. The control signals may include memory operation pulses for implementing operations on selected non-volatile memory cells embodied within the same die as the sequencer (and other on-die memory control circuitry). The timing, configuration, and/or duration of the memory control signals are defined in configuration data, which can be modified after the design and/or fabrication of the die and/or on-die memory circuitry. As such, the timing, configuration, and/or duration of the memory control signals generated by the sequencer may be manipulated after the design and/or fabrication of the die, sequencer, and other on-die memory control circuitry.

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