公开(公告)号：US20190018597A1

公开(公告)日：2019-01-17

申请号：US15870390

申请日：2018-01-12

Applicant: SanDisk Technologies LLC

Inventor： Yuheng Zhang ,  Gordon Yee ,  Yibo Yin ,  Tz-Yi Liu

IPC: G06F3/06

Abstract: A sequencer circuit is configured to generate control signals for on-die memory control circuitry. The control signals may include memory operation pulses for implementing operations on selected non-volatile memory cells embodied within the same die as the sequencer (and other on-die memory control circuitry). The timing, configuration, and/or duration of the memory control signals are defined in configuration data, which can be modified after the design and/or fabrication of the die and/or on-die memory circuitry. As such, the timing, configuration, and/or duration of the memory control signals generated by the sequencer may be manipulated after the design and/or fabrication of the die, sequencer, and other on-die memory control circuitry.