公开(公告)号：US20210134370A1

公开(公告)日：2021-05-06

申请号：US16701450

申请日：2019-12-03

Applicant: SanDisk Technologies LLC

Inventor： Zhiping Zhang ,  Muhammad Masuduzzaman ,  Huai-Yuan Tseng ,  Dengtao Zhao ,  Deepanshu Dutta

IPC: G11C16/12 ,  G11C16/10 ,  G11C16/24 ,  G11C16/34 ,  G11C16/26

Abstract: A method of concurrently programming a memory. Various methods include: applying a non-negative voltage on a first bit line coupled to a first memory cell; applying a negative voltage on a second bit line coupled to a second memory cell, where the negative voltage is generated using triple-well technology; then applying a programming pulse to the first and second memory cells concurrently; and in response, programming the first and second memory cells to different states. The methods also include applying a quick pass write operation to the first and second memory cells, by: applying a quick pass write voltage to the first bit line coupled to the first memory cell, where the quick pass write voltage is higher than the non-negative voltage; applying a negative quick pass write voltage to the second bit line coupled to the first memory cell, where the negative quick pass write voltage is generated using triple-well technology.

公开(公告)号：US10984867B1

公开(公告)日：2021-04-20

申请号：US16724876

申请日：2019-12-23

Applicant: SanDisk Technologies LLC

Inventor： Zhiping Zhang ,  Sarath Chandran Puthen Thermadam ,  Huai-Yuan Tseng ,  Deepanshu Dutta

IPC: G11C16/04 ,  G11C16/08 ,  G11C16/34 ,  G11C16/26 ,  G11C16/10

Abstract: A memory apparatus and method of operation are provided. The apparatus includes first memory cells coupled to control circuit and a particular word line and storing a first cell data. The apparatus also includes second memory cells coupled to a source side neighbor word line disposed on a source side of the particular word line and storing second cell threshold voltages programmed after the first cell data. The control circuit senses the second cell threshold voltages at a first time while applying a predetermined initial read voltage to the source side neighbor word line. The control circuit senses the first cell data at a second time while iteratively applying one of a plurality of particular read voltages to the particular word line and simultaneously and iteratively applying one of a plurality of neighbor pass voltages to the source side neighbor word line based on the second cell threshold voltages.