公开(公告)号：US20160240683A1

公开(公告)日：2016-08-18

申请号：US15012403

申请日：2016-02-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Yukinori SHIMA ,  Satoru SAITO

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L29/78696

Abstract: To reduce parasitic capacitance in a semiconductor device having a transistor including an oxide semiconductor. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide semiconductor film over the first gate insulating film, and source and drain electrodes electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The atomic proportion of In is larger than the atomic proportion of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf) in the first oxide semiconductor film, and the atomic proportion of In in the second oxide semiconductor film is smaller than that in the first oxide semiconductor film.

Abstract translation: 减少具有包括氧化物半导体的晶体管的半导体器件中的寄生电容。 晶体管包括第一栅极电极，第一栅电极上的第一栅极绝缘膜，第一栅极绝缘膜上的氧化物半导体膜，以及电连接到氧化物半导体膜的源极和漏极。 氧化物半导体膜包括第一栅电极侧的第一氧化物半导体膜和第一氧化物半导体膜上的第二氧化物半导体膜。 In的原子比例大于第一氧化物半导体膜中的M（M为Ti，Ga，Sn，Y，Zr，La，Ce，Nd或Hf）的原子比例，并且In的原子比例 第二氧化物半导体膜比第一氧化物半导体膜小。

公开(公告)号：US20130200367A1

公开(公告)日：2013-08-08

申请号：US13751767

申请日：2013-01-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Satoru SAITO ,  Terumasa IKEYAMA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/41733

Abstract: An object of one embodiment of the present invention is to provide a highly reliable semiconductor device by giving stable electric characteristics to a transistor including an oxide semiconductor film. The semiconductor device includes a gate electrode layer over a substrate, a gate insulating film over the gate electrode layer, an oxide semiconductor film over the gate insulating film, a drain electrode layer provided over the oxide semiconductor film to overlap with the gate electrode layer, and a source electrode layer provided to cover an outer edge portion of the oxide semiconductor film. The outer edge portion of the drain electrode layer is positioned on the inner side than the outer edge portion of the gate electrode layer.