公开(公告)号：US20250014615A1

公开(公告)日：2025-01-09

申请号：US18768111

申请日：2024-07-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jun KOYAMA ,  Shunpei YAMAZAKI

IPC: G11C5/10 ,  G11C7/12 ,  G11C7/18 ,  G11C11/408 ,  G11C11/4094 ,  G11C11/4097 ,  H01L27/02 ,  H01L27/06 ,  H01L27/12 ,  H01L29/786 ,  H10B12/00

Abstract: An object of one embodiment of the present invention is to propose a memory device in which a period in which data is held is ensured and memory capacity per unit area can be increased. In the memory device of one embodiment of the present invention, bit lines are divided into groups, and word lines are also divided into groups. The word lines assigned to one group are connected to the memory cell connected to the bit lines assigned to the one group. Further, the driving of each group of bit lines is controlled by a dedicated bit line driver circuit of a plurality of bit line driver circuits. In addition, cell arrays are formed on a driver circuit including the above plurality of bit line driver circuits and a word line driver circuit. The driver circuit and the cell arrays overlap each other.

公开(公告)号：US20240413166A1

公开(公告)日：2024-12-12

申请号：US18805622

申请日：2024-08-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Atsushi HIROSE ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L27/12 ,  H01L21/8234 ,  H01L27/15 ,  H01L29/24 ,  H01L29/36 ,  H01L29/786 ,  H01L33/00 ,  H01L33/02 ,  H04M1/02 ,  H04R1/02 ,  H10K59/35

Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

公开(公告)号：US20240363646A1

公开(公告)日：2024-10-31

申请号：US18769592

申请日：2024-07-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jun KOYAMA

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/124 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  G02F1/136231 ,  G02F2201/123 ,  H01L29/41733

Abstract: Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four photolithography steps: a step of forming a gate electrode (including a wiring formed using the same layer as the gate electrode), a step of forming source and drain electrodes (including a wiring formed using the same layer as the source and drain electrodes), a step of forming a contact hole (including the removal of an insulating layer and the like in a region other than the contact hole), and a step of forming a pixel electrode (including a wiring formed using the same layer as the pixel electrode). By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at low cost and high productivity. Formation of a parasitic channel is prevented by an improvement in shape and potential of a wiring.

公开(公告)号：US20240281032A1

公开(公告)日：2024-08-22

申请号：US18645788

申请日：2024-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: G06F1/16 ,  G06F1/26 ,  G11C5/06 ,  H01L29/786

CPC classification number: G06F1/1635 ,  G06F1/1626 ,  G06F1/1637 ,  G06F1/263 ,  G11C5/063 ,  H01L29/786

Abstract: A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.

公开(公告)号：US20240072176A1

公开(公告)日：2024-02-29

申请号：US18504297

申请日：2023-11-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Jun KOYAMA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696 ,  H01L21/02554

Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

公开(公告)号：US20230413587A1

公开(公告)日：2023-12-21

申请号：US18242210

申请日：2023-09-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: H10B99/00 ,  H01L27/105 ,  H01L27/12 ,  H10B12/00 ,  H10B41/20 ,  H10B41/70 ,  H01L29/24 ,  H01L29/786

CPC classification number: H10B99/00 ,  H01L27/105 ,  H01L27/1225 ,  H10B12/00 ,  H10B41/20 ,  G11C13/0007 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78696 ,  H10B41/70

Abstract: An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.

公开(公告)号：US20230369510A1

公开(公告)日：2023-11-16

申请号：US18225840

申请日：2023-07-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Keitaro IMAI

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/06 ,  H01L21/84

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/0688 ,  H01L27/1207 ,  H01L21/84

Abstract: An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation region on a substrate containing a semiconductor material, impurity regions formed with the channel formation region interposed therebetween, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer, and a first source electrode and a first drain electrode which are electrically connected to the impurity region; and a second transistor which includes a second gate electrode over the substrate containing a semiconductor material, a second gate insulating layer over the second gate electrode, an oxide semiconductor layer over the second gate insulating layer, and a second source electrode and a second drain electrode which are electrically connected to the oxide semiconductor layer.

公开(公告)号：US20230258991A1

公开(公告)日：2023-08-17

申请号：US18115017

申请日：2023-02-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshikazu KONDO ,  Jun KOYAMA ,  Shunpei YAMAZAKI

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L29/45 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1333 ,  G09G3/36

CPC classification number: G02F1/1368 ,  G02F1/136286 ,  H01L29/45 ,  H01L27/1225 ,  H01L27/1244 ,  H01L29/7869 ,  G02F1/133345 ,  G02F1/136227 ,  G09G3/3622 ,  G02F1/13606

Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

公开(公告)号：US20220149045A1

公开(公告)日：2022-05-12

申请号：US17582092

申请日：2022-01-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: H01L27/105 ,  H01L27/12 ,  H01L29/24 ,  H01L29/16 ,  G11C11/405 ,  G11C16/04 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/118 ,  H01L27/115 ,  H01L29/786

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

公开(公告)号：US20210336060A1

公开(公告)日：2021-10-28

申请号：US17367689

申请日：2021-07-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Jun KOYAMA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24

Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are foamed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.