公开(公告)号：US09915001B2

公开(公告)日：2018-03-13

申请号：US14821949

申请日：2015-08-10

Applicant: SILCOTEK CORP.

Inventor： Min Yuan ,  David A. Smith ,  Paul H. Silvis ,  James B. Mattzela

IPC: C23C16/30 ,  C23C16/46 ,  C23C16/56 ,  C23C16/52 ,  C23C16/22

CPC classification number: C23C16/52 ,  C23C16/22 ,  C23C16/30 ,  C23C16/46 ,  C23C16/56

Abstract: A chemical vapor deposition process and coated article are disclosed. The chemical vapor deposition process includes positioning an article in a chemical vapor deposition chamber, then introducing a deposition gas to the chemical vapor deposition chamber at a sub-decomposition temperature that is below the thermal decomposition temperature of the deposition gas, and then heating the chamber to a super-decomposition temperature that is equal to or above the thermal decomposition temperature of the deposition gas resulting in a deposited coating on at least a surface of the article from the introducing of the deposition gas. The chemical vapor deposition process remains within a pressure range of 0.01 psia and 200 psia and/or the deposition gas is dimethylsilane. The coated article includes a substrate subject to corrosion and a deposited coating on the substrate, the deposited coating having silicon, and corrosion resistance.