公开(公告)号：US20190218661A1

公开(公告)日：2019-07-18

申请号：US16249314

申请日：2019-01-16

申请人： SILCOTEK CORP.

发明人： Geoffrey K. WHITE ,  Lucas D. PATTERSON ,  Corey M. ROBINSON ,  William David GROVE ,  Nicholas Peter DESKEVICH

IPC分类号： C23C16/22

CPC分类号： C23C16/22

摘要： A spooled arrangement and a process of producing a spooled arrangement are disclosed. The spooled arrangement includes a substrate, the substrate being metal or metallic. The substrate has an inner surface and an outer surface, the inner surface and the outer surface being in a furled configuration to define the spooled arrangement. The inner surface and the outer surface have a coating, the coating being an amorphous silicon coating, a silicon-oxygen-carbon-containing coating, a silicon-nitrogen-containing coating, a silicon-fluorine-carbon-containing coating, or a combination thereof. The process includes producing the spooled arrangement.

公开(公告)号：US10047435B2

公开(公告)日：2018-08-14

申请号：US14687833

申请日：2015-04-15

申请人： ASM IP Holding B.V.

发明人： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore

IPC分类号： C23C16/04 ,  C23C16/02 ,  C23C16/06 ,  C23C16/40 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  C23C16/18 ,  C23C16/22 ,  H01L21/285 ,  H01L21/768

CPC分类号： C23C16/04 ,  C23C16/02 ,  C23C16/06 ,  C23C16/18 ,  C23C16/22 ,  C23C16/30 ,  C23C16/402 ,  C23C16/405 ,  C23C16/407 ,  C23C16/408 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76829 ,  H01L21/76849

摘要： Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

公开(公告)号：US20180223413A1

公开(公告)日：2018-08-09

申请号：US15749660

申请日：2015-12-23

申请人： POSCO

发明人： Hyunju JEONG ,  Jong-Seog LEE ,  Jeong-Hee LEE

IPC分类号： C23C14/08 ,  C23C14/16 ,  C23C16/06 ,  C23C16/40 ,  C23C16/455 ,  C23C28/00 ,  C23C14/00

CPC分类号： C23C14/081 ,  C23C14/0015 ,  C23C14/08 ,  C23C14/086 ,  C23C14/14 ,  C23C14/16 ,  C23C16/06 ,  C23C16/22 ,  C23C16/40 ,  C23C16/455 ,  C23C28/00 ,  C23C28/30

摘要： Provided is a colored substrate containing magnesium and a substrate coloring method therefor. The colored substrate has a structure in which a film containing a metal oxide and a wavelength conversion layer are sequentially laminated on a magnesium base, and can thus uniformly display various colors on the surface thereof through the control of the average thickness of the film while maintaining the unique texture and gloss of the metal.

公开(公告)号：US10014523B2

公开(公告)日：2018-07-03

申请号：US14767578

申请日：2013-02-13

申请人： KOREA INSTITUTE OF ENERGY RESEARCH

发明人： Bo-Yun Jang ,  Joon-Soo Kim ,  Jin-Seok Lee

IPC分类号： H01M4/48 ,  C23C16/22 ,  C23C16/455 ,  H01M4/04 ,  B82Y40/00 ,  H01M4/02

CPC分类号： H01M4/483 ,  B82Y40/00 ,  C23C16/22 ,  C23C16/45563 ,  H01M4/0471 ,  H01M2004/021 ,  H01M2004/027 ,  H01M2004/028

摘要： There is disclosed that a MOx nanostructure manufacturing apparatus and a manufacturing method thereof can not only supply a reaction gas more effectively to the surface of a molten metal with ease by injecting a carrier gas to the surface of the molten metal above a graphite crucible as well as bringing the reaction gas in the lower side of the graphite crucible, but also maximize volatilization rates through an inflow of the reaction gas from the lower portion toward the upper of the graphite crucible.

公开(公告)号：US20180141081A1

公开(公告)日：2018-05-24

申请号：US15857554

申请日：2017-12-28

申请人： AREVA NP ,  NITRUVID

发明人： Bernard DELMAS ,  Dominique HERTZ ,  Jean-Paul LEBRUN ,  Bernard LIS ,  Laurent POIRIER

IPC分类号： B05D5/00 ,  C23C16/513 ,  C23C16/04 ,  C23C16/22 ,  B05D7/14 ,  C23C8/04 ,  B05D1/32 ,  B05C21/00

CPC分类号： B05D5/00 ,  B05C21/005 ,  B05D1/32 ,  B05D7/14 ,  B05D7/146 ,  C23C8/04 ,  C23C16/042 ,  C23C16/22 ,  C23C16/513

摘要： A method for thermochemically treating a part while masking a portion and corresponding mask are provided. The method includes the steps of providing a mask comprising a body with a seat, at least a deformable sealing washer located in the seat, and a tightening bushing, the body having a cavity, placing a first portion of the part in the cavity, a second portion of the part being located in a passage in the sealing washer, and a third portion of the part being located outside the mask, moving the tightening bushing to its tightened position so that the sealing washer is deformed and applied against the second portion of the part, and applying a thermochemical treatment to the third portion of the part.

公开(公告)号：US09944532B2

公开(公告)日：2018-04-17

申请号：US15030003

申请日：2014-10-22

申请人： SOCPRA Science et Genie S.E.C. ,  UNIVERSITÉ DE BISHOP

发明人： Mihai Scarlete ,  Cetin Aktik

IPC分类号： C23C16/00 ,  C01B33/04 ,  C23C16/22 ,  C23C16/448 ,  C09D5/24 ,  C09K5/14

CPC分类号： C01B33/043 ,  C01B33/04 ,  C09D5/24 ,  C09K5/14 ,  C23C16/22 ,  C23C16/448

摘要： The present document described a solid source and a method for synthesis of silicon-containing precursors for chemical vapor deposition. The solid source comprises a solid polysilane; an energy coupling agent distributed in the solid polysilane; and hydrogen, mixed with the solid polysilane and the energy coupling agent distributed in the solid polysilane, in a necessary amount to satisfy a hydrogen deficiency during a hydrogenolysis reaction.

公开(公告)号：US09941425B2

公开(公告)日：2018-04-10

申请号：US14885721

申请日：2015-10-16

申请人： ASM IP HOLDING B.V.

发明人： Tom E. Blomberg ,  Hannu Huotari

IPC分类号： H01L31/0232 ,  H01L31/18 ,  H01L33/00 ,  H01L33/58 ,  C23C16/22 ,  H01L31/032 ,  H01L31/062 ,  H01L31/072

CPC分类号： H01L31/02322 ,  C23C14/06 ,  C23C14/0694 ,  C23C16/22 ,  C23C16/30 ,  C23C16/45525 ,  H01L31/032 ,  H01L31/062 ,  H01L31/072 ,  H01L31/18 ,  H01L33/005 ,  H01L33/58 ,  H01L2933/0016 ,  H01L2933/0025 ,  Y02E10/50

摘要： Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.

公开(公告)号：US09862617B2

公开(公告)日：2018-01-09

申请号：US14749212

申请日：2015-06-24

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

发明人： Matthew Law ,  Sean Seefeld ,  James Puthussery

IPC分类号： B05D5/12 ,  C01G49/12 ,  B82Y30/00 ,  B82Y40/00 ,  C23C16/30 ,  C23C16/44 ,  H01L31/032 ,  H01L31/072 ,  B05D1/00 ,  B05D1/02 ,  B05D1/18 ,  C23C16/22 ,  C23C16/56

CPC分类号： C01G49/12 ,  B05D1/005 ,  B05D1/02 ,  B05D1/18 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/32 ,  C01P2004/64 ,  C01P2006/22 ,  C23C16/22 ,  C23C16/305 ,  C23C16/4417 ,  C23C16/56 ,  H01L31/032 ,  H01L31/072 ,  Y02E10/50

摘要： Systems and methods are provided for the fabrication and manufacture of efficient, low-cost p-n heterojunction pyrite solar cells. The p-n heterojunction pyrite solar cells can include a pyrite thin cell component, a window layer component, and a top surface contact component. The pyrite thin cell component can be fabricated from nanocrystal paint deposited onto metal foils or microcrystalline pyrite deposited onto foil by chemical vapor deposition. A method of synthesizing colloidal pyrite nanocrystals is provided. Methods of manufacturing the efficient, low-cost p-n heterojunction pyrite solar cells are also provided.

公开(公告)号：US20170287914A1

公开(公告)日：2017-10-05

申请号：US15472486

申请日：2017-03-29

申请人： TOKYO ELECTRON LIMITED

发明人： Mitsuhiro OKADA

IPC分类号： H01L27/108 ,  C23C16/22 ,  H01L21/265 ,  C23C16/458 ,  C23C16/455 ,  H01L21/02 ,  C23C16/02 ,  C23C16/52

CPC分类号： H01L27/1085 ,  C23C16/0272 ,  C23C16/22 ,  C23C16/45523 ,  C23C16/4582 ,  C23C16/52 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/26506 ,  H01L28/00

摘要： A method for forming a boron-doped silicon germanium film on a base film in a surface of an object to be processed includes: forming a seed layer by adsorbing a chlorine-free boron-containing gas to a surface of the base film; and forming a boron-doped silicon germanium film on the surface of the base film to which the seed layer is adsorbed by using a silicon raw material gas, a germanium raw material gas, and a boron doping gas through a chemical vapor deposition method.

公开(公告)号：US09768016B2

公开(公告)日：2017-09-19

申请号：US14899552

申请日：2014-06-25

申请人： Ultratech, Inc.

发明人： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/04 ,  H01L21/02 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  B23K26/12 ,  C23C16/22 ,  C23C16/56 ,  H01L21/268 ,  H01L21/324 ,  H01L29/20 ,  B23K103/00

CPC分类号： H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

摘要： Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.