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    Nano-wire growth
    1.
    发明授权
    Nano-wire growth 有权

    公开(公告)号：US11618970B2

    公开(公告)日：2023-04-04

    申请号：US17115238

    申请日：2020-12-08

    申请人： SILCOTEK CORP.

    发明人： Min Yuan

    IPC分类号： C30B29/62 ,  C01B33/04 ,  C30B25/18 ,  C30B29/12 ,  C30B33/00 ,  B82Y30/00 ,  B82Y40/00

    摘要： Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

    LIQUID CHROMATOGRAPHY SYSTEM AND COMPONENT
    2.
    发明申请
    LIQUID CHROMATOGRAPHY SYSTEM AND COMPONENT 有权

    公开(公告)号：US20210381105A1

    公开(公告)日：2021-12-09

    申请号：US17411545

    申请日：2021-08-25

    申请人： SILCOTEK CORP.

    发明人： Gary A. BARONE

    IPC分类号： C23C16/455 ,  C23C16/24

    摘要： Liquid chromatography systems and liquid chromatography components are disclosed. In an embodiment, a liquid chromatography system includes a liquid chromatography component. The liquid chromatography component includes a substrate and an amorphous coating on the substrate. The amorphous coating has a base layer and a surface layer. The base layer includes carboxysilane.

    MOLYBDENUM SUBSTRATE WITH AN AMORPHOUS CHEMICAL VAPOR DEPOSITION COATING
    4.
    发明申请
    MOLYBDENUM SUBSTRATE WITH AN AMORPHOUS CHEMICAL VAPOR DEPOSITION COATING 审中-公开

    公开(公告)号：US20190136371A1

    公开(公告)日：2019-05-09

    申请号：US16181512

    申请日：2018-11-06

    申请人： SILCOTEK CORP.

    发明人： Jesse BISCHOF

    IPC分类号： C23C16/24 ,  C23C16/44 ,  C23C16/02 ,  C23C16/56

    摘要： Article having a molybdenum substrate and an amorphous chemical vapor deposition coating on the molybdenum substrate, processes of using the articles, and processes of producing the articles are disclosed. The articles include a molybdenum substrate and an amorphous chemical vapor deposition coating on the molybdenum substrate. The amorphous chemical vapor deposition coating includes silicon. The processes of using the article include exposing the article to temperatures of greater than 1,200° C. The processes of producing the article include positioning the molybdenum substrate, and applying the amorphous chemical vapor deposition coating on the molybdenum substrate through thermal chemical vapor deposition.

    Silicon-nitride-containing thermal chemical vapor deposition coating
    5.
    发明授权
    Silicon-nitride-containing thermal chemical vapor deposition coating 有权

    公开(公告)号：US10087521B2

    公开(公告)日：2018-10-02

    申请号：US14970015

    申请日：2015-12-15

    申请人： SILCOTEK CORP.

    发明人： Min Yuan ,  James B. Mattzela ,  David A. Smith

    IPC分类号： C23C16/00 ,  C23C16/34 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  C23C16/04

    摘要： Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

    THERMAL CHEMICAL VAPOR DEPOSITION COATING
    6.
    发明申请
    THERMAL CHEMICAL VAPOR DEPOSITION COATING 审中-公开

    公开(公告)号：US20180258529A1

    公开(公告)日：2018-09-13

    申请号：US15755962

    申请日：2016-08-31

    申请人： SILCOTEK CORP.

    发明人： Thomas F. VEZZA ,  James B. MATTZELA ,  Gary A. BARONE ,  William David GROVE ,  Paul H. SILVIS

    IPC分类号： C23C16/455 ,  C23C16/24

    CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/24

    摘要： Thermal chemical vapor deposition coated articles and thermal chemical vapor deposition processes are disclosed. The thermal chemical vapor deposition coated article includes a substrate and a coating on the substrate, the coating having multiple layers and being positioned on regions of the thermal chemical vapor deposition coated article that are unable to be concurrently coated through line-of-sight techniques. The coating has a concentration of particulate from gas phase nucleation, per 100 square micrometers, of fewer than 6 particles having a dimension of greater than 0.5 micrometers. The thermal chemical vapor deposition process includes introducing a multiple aliquot of a silicon-containing precursor to the enclosed vessel with intermediate gaseous soaking to produce the coated article.

    CHEMICAL VAPOR DEPOSITION SYSTEM ARRANGEMENT
    7.
    发明申请
    CHEMICAL VAPOR DEPOSITION SYSTEM ARRANGEMENT 审中-公开
    化学蒸气沉积系统布置

    公开(公告)号：US20160053375A1

    公开(公告)日：2016-02-25

    申请号：US14818517

    申请日：2015-08-05

    申请人： SILCOTEK CORP.

    发明人： Nicholas Peter DESKEVICH ,  William David GROVE

    IPC分类号： C23C16/455 ,  C23C16/48

    CPC分类号： C23C16/45561 ,  C23C16/48 ,  C23C16/481 ,  C23C16/52

    摘要： A chemical vapor deposition system, method and arrangement of systems are disclosed. The arrangement of chemical vapor deposition systems includes a first chemical vapor deposition system comprising a first coating chamber, a second chemical vapor deposition system comprising a second coating chamber, and a fluid introduction system comprising a vacuum pump and a fluid introduction arrangement arranged and disposed to introduce a fluid to one or both of the first coating chamber and the second coating chamber for chemical vapor deposition coating. At least a portion of the fluid introduction system is arranged for operation with the first chemical vapor deposition system and the second chemical vapor deposition system. The chemical vapor deposition method includes operating the second chemical vapor deposition system. The chemical vapor deposition system includes a non-cuboid coating chamber.

    摘要翻译： 公开了一种化学气相沉积系统，系统的方法和装置。 化学气相沉积系统的布置包括第一化学气相沉积系统，其包括第一涂覆室，包括第二涂覆室的第二化学气相沉积系统和包括真空泵和流体引入装置的流体引入系统， 将流体引入用于化学气相沉积涂层的第一涂覆室和第二涂覆室中的一个或两个。 流体引入系统的至少一部分被布置成与第一化学气相沉积系统和第二化学气相沉积系统一起操作。 化学气相沉积方法包括操作第二化学气相沉积系统。 化学气相沉积系统包括非长方体涂层室。

    COATED ARTICLE AND CHEMICAL VAPOR DEPOSITION PROCESS
    8.
    发明申请
    COATED ARTICLE AND CHEMICAL VAPOR DEPOSITION PROCESS 审中-公开
    涂料和化学气相沉积工艺

    公开(公告)号：US20140370300A1

    公开(公告)日：2014-12-18

    申请号：US14471137

    申请日：2014-08-28

    申请人： SILCOTEK CORP.

    发明人： David A. SMITH

    IPC分类号： C23C16/46 ,  C23C16/02

    摘要： A coated article and a chemical vapor deposition process are disclosed. The coated article includes a functionalized layer applied to the coated article by chemical vapor deposition. The functionalized layer is a layer selected from the group consisting of an oxidized-then-functionalized layer, an organofluoro treated layer, a fluorosilane treated layer, a trimethylsilane treated surface, an organofluorotrialkoxysilanes treated layer, an organofluorosilylhydrides-treated layer, an organofluoro silyl treated layer, a tridecafluoro 1,1,2,2-tetrahydrooctylsilane treated layer, an organofluoro alcohol treated layer, a pentafluoropropanol treated layer, an allylheptafluoroisopropyl ether treated layer, a (perfluorobutyl) ethylene treated layer, a (perfluorooctyl) ethylene treated layer, and combinations thereof. The process includes applying the functionalized layer.

    摘要翻译： 公开了涂覆制品和化学气相沉积工艺。 涂覆制品包括通过化学气相沉积施加到涂覆制品上的官能化层。 官能化层是选自氧化官能化层，有机氟处理层，氟硅烷处理层，三甲基硅烷处理表面，有机氟代三烷氧基硅烷处理层，有机氟代硅烷化处理层，有机氟甲硅烷基处理层 三氟代1,1,2,2-四氢辛基硅烷处理层，有机氟醇处理层，五氟丙醇处理层，烯丙基三氟异丙醚处理层，（全氟丁基）乙烯处理层，（全氟辛基）乙烯处理层，和 其组合。 该方法包括应用官能化层。