公开(公告)号：US20240020252A1

公开(公告)日：2024-01-18

申请号：US18072159

申请日：2022-11-30

Applicant: SK hynix Inc.

Inventor： Joon Seop SIM

IPC: G06F13/28

CPC classification number: G06F13/28

Abstract: The present disclosure relates to a computing system. The computing system may include a memory system including a plurality of memory devices configured to store raw data and a near data processor (NDP) configured to receive the raw data by a first bandwidth from the plurality of memory devices and generate intermediate data by performing a first operation on the raw data, and a host device coupled to the memory system by a second bandwidth and determining a resource to perform a second operation on the intermediate data based on a bandwidth ratio and a data size ratio.

公开(公告)号：US20160071955A1

公开(公告)日：2016-03-10

申请号：US14946035

申请日：2015-11-19

Applicant: SK hynix Inc.

Inventor： Joon Seop SIM

IPC: H01L29/66 ,  H01L21/265 ,  H01L27/24 ,  H01L21/306 ,  H01L29/423 ,  H01L29/08

CPC classification number: H01L29/66666 ,  H01L21/26513 ,  H01L21/30604 ,  H01L27/228 ,  H01L27/2436 ,  H01L27/2454 ,  H01L29/0847 ,  H01L29/4236 ,  H01L29/66628

Abstract: A semiconductor integrated circuit apparatus and a method of manufacturing the same are provided. The semiconductor integrated circuit apparatus includes a semiconductor substrate having an active island, a gate buried in a predetermined portion of the active island, a source and a drain formed at both sides of the gate, and a current blocking layer formed in the active island corresponding to a lower portion of the drain. When current flows in from the drain, the current blocking layer is configured to discharge the current into the inside of the semiconductor substrate through a lower portion of the source.

公开(公告)号：US20140361240A1

公开(公告)日：2014-12-11

申请号：US14046468

申请日：2013-10-04

Applicant: SK hynix Inc.

Inventor： Joon Seop SIM

IPC: H01L29/66 ,  H01L27/24

CPC classification number: H01L29/66666 ,  H01L21/26513 ,  H01L21/30604 ,  H01L27/228 ,  H01L27/2436 ,  H01L27/2454 ,  H01L29/0847 ,  H01L29/4236 ,  H01L29/66628

Abstract: A semiconductor integrated circuit apparatus and a method of manufacturing the same are provided. The semiconductor integrated circuit apparatus includes a semiconductor substrate having an active island, a gate buried in a predetermined portion of the active island, a source and a drain formed at both sides of the gate, and a current blocking layer formed in the active island corresponding to a lower portion of the drain. When current flows in from the drain, the current blocking layer is configured to discharge the current into the inside of the semiconductor substrate through a lower portion of the source.

Abstract translation: 提供一种半导体集成电路装置及其制造方法。 半导体集成电路装置包括具有有源岛的半导体衬底，埋在有源岛的预定部分中的栅极，形成在栅极两侧的源极和漏极以及形成在有源岛中的电流阻挡层对应 到排水管的下部。 当电流从漏极流入时，电流阻挡层被配置为通过源的下部将电流放电到半导体衬底的内部。