公开(公告)号：US11916066B2

公开(公告)日：2024-02-27

申请号：US17591534

申请日：2022-02-02

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuná

IPC: H01L29/66 ,  H01L21/04 ,  H01L27/06 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16 ,  H01L29/423 ,  H01L29/78 ,  H01L29/872

CPC classification number: H01L27/0629 ,  H01L21/046 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4238 ,  H01L29/66068 ,  H01L29/7806 ,  H01L29/872

Abstract: An integrated MOSFET device is formed in a body of silicon carbide and with a first type of conductivity. The body accommodates a first body region, with a second type of conductivity; a JFET region adjacent to the first body region; a first source region, with the first type of conductivity, extending into the interior of the first body region; an implanted structure, with the second type of conductivity, extending into the interior of the JFET region. An isolated gate structure lies partially over the first body region, the first source region and the JFET region. A first metallization layer extends over the first surface and forms, in direct contact with the implanted structure and with the JFET region, a JBS diode.