公开(公告)号：US20220238738A1

公开(公告)日：2022-07-28

申请号：US17719205

申请日：2022-04-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello SANTANGELO ,  Massimo Cataldo MAZZILLO ,  Salvatore CASCINO ,  Giuseppe LONGO ,  Antonella SCIUTO

IPC: H01L31/0352 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/107 ,  H01L31/18 ,  H01L31/0312

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

公开(公告)号：US20190137427A1

公开(公告)日：2019-05-09

申请号：US16167165

申请日：2018-10-22

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Salvatore CASCINO ,  Antonello SANTANGELO

IPC: G01N27/12 ,  H05B3/02 ,  H05B3/10 ,  H05B3/20

Abstract: A micro-heater element for a MEMS sensor device, envisages, in a single conductive layer: an outer ring, defining inside it a window; a heat-diffusion structure, arranged within the window, separated from the outer ring by a first separation gap; and connection elements, arranged between the heat-diffusion structure and the outer ring, and designed to connect the heat-diffusion structure to the outer ring. The outer ring is designed to dissipate energy upon passage of an electric current, and the heat-diffusion structure is designed to distribute, within the micro-heater element, the heat that is transferred by the outer ring through the connection elements.

公开(公告)号：US20190128830A1

公开(公告)日：2019-05-02

申请号：US16171151

申请日：2018-10-25

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Alessandra ALBERTI ,  Lucio RENNA ,  Leonardo GERVASI ,  Emanuele SMECCA ,  Salvatore SANZARO ,  Clelia Carmen GALATI ,  Antonello SANTANGELO ,  Antonino LA MAGNA

IPC: G01N27/12 ,  B81B3/00 ,  B81C1/00

Abstract: Gas sensor, comprising: a substrate of semiconductor material; a first working electrode on the substrate; a second working electrode on the substrate, at a distance from the first working electrode; an interconnection layer extending in electrical contact with the first and the second working electrode, configured to change its conductivity when reacting with gas species to be detected. The interconnection layer is of titanium oxide, has a porosity between 40% and 60% in volume and is formed by a plurality of meso-pores having at least one dimension in the range 6-30 nm connected to nano-pores having at least one respective dimension in the range 1-5 nm.