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公开(公告)号:US10002990B2
公开(公告)日:2018-06-19
申请号:US15087183
申请日:2016-03-31
Applicant: STMicroelectronics S.r.l.
Inventor: Marco Morelli , Fabrizio Fausto Renzo Toia , Giuseppe Barillaro , Marco Sambi
CPC classification number: H01L33/346 , H01L33/0054 , H01L33/145
Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.
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公开(公告)号:US20170312782A1
公开(公告)日:2017-11-02
申请号:US15463858
申请日:2017-03-20
Applicant: STMicroelectronics S.r.l.
Inventor: Marco Morelli , Fabio Quaglia , Fabrizio Fausto Renzo Toia , Marco Sambi , Giuseppe Barillaro
CPC classification number: B06B1/0292 , A61B8/4483 , B06B1/0644 , B06B1/067 , B06B1/0685 , G10K9/22 , G10K11/02 , H04R19/005
Abstract: An acoustic device includes a micro-machined acoustic transducer element, an acoustically attenuating region, and an acoustic matching region arranged between the acoustic transducer element and the acoustically attenuating region. The acoustic transducer element is formed in a first substrate housing a cavity delimiting a membrane. A second substrate of semiconductor material integrating an electronic circuit is arranged between the acoustic transducer element and the acoustically attenuating region. The acoustic matching region has a first interface with the second substrate and a second interface with the acoustically attenuating region. The acoustic matching region has an impedance matched to the impedance of the second substrate in proximity of the first interface, and an impedance matched to the acoustically attenuating region in proximity of the second interface.
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