公开(公告)号：US08492850B2

公开(公告)日：2013-07-23

申请号：US12308200

申请日：2007-04-27

申请人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

发明人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

IPC分类号： H01L27/088

CPC分类号： H01L21/02008 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02612 ,  H01L21/02656 ,  H01L21/02658 ,  H01L21/02667 ,  H01L33/346

摘要： A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.

摘要翻译： 一种制造硅衬底的方法，包括以下步骤：提供具有基本平坦的硅表面的硅衬底，产生具有多个孔的多孔硅表面，特别是具有大孔和/或介孔和/或纳米孔， 要插入硅的材料，其直径小于孔的直径，如果需要，将填充材料插入孔中并除去多余的填充材料形成硅表面，并回火硅衬底 配备有已经填充到孔中的填充材料，温度约为 1000℃和约 1400℃，以便再次闭合所产生的孔并包围填充材料。

公开(公告)号：US20080166538A1

公开(公告)日：2008-07-10

申请号：US11967138

申请日：2007-12-29

申请人： Sang Woo LIM ,  Young Hwan Lee

发明人： Sang Woo LIM ,  Young Hwan Lee

IPC分类号： B32B3/26 ,  C25D9/06

CPC分类号： C25D11/32 ,  H01L21/0203 ,  H01L21/3063 ,  H01L33/346 ,  Y10T428/24942 ,  Y10T428/249953 ,  Y10T428/24996 ,  Y10T428/249969

摘要： The present invention relates to a vertical-alignment type porous silicon including a first pore 11 which is formed in an upper side of the silicon, a second pore 12 which is formed in a lower side of the first pore 11 and has a diameter that is larger or smaller than a diameter of the first pore 11, a third pore 13 which is formed in a lower side of the second pore 12 and has a diameter that is identical or similar to the diameter of the first pore 11, and one or more pore parts 11, 12, and 13 which includes the first pore 11, the second pore 12, and the third pore 13. A pore part having a double structure is formed in a silicon. Thus, the silicon having an improved surface area can be obtained as compared to a known porous silicon, and since different electronic materials can be implanted into different pores, it is easy to form interfaces of the implanted electronic materials.

摘要翻译： 本发明涉及一种垂直取向型多孔硅，其包括形成于硅的上侧的第一孔11，第二孔12，其形成在第一孔11的下侧，直径为 大于或小于第一孔11的直径;第三孔13，其形成在第二孔12的下侧，并且具有与第一孔11的直径相同或相似的直径，以及一个或多个 包括第一孔11，第二孔12和第三孔13的孔部分11,12和13。 在硅中形成具有双重结构的孔部分。 因此，与已知的多孔硅相比，可以获得具有改善的表面积的硅，并且由于可以将不同的电子材料注入到不同的孔中，所以容易形成植入的电子材料的界面。

公开(公告)号：US20070004064A1

公开(公告)日：2007-01-04

申请号：US11455932

申请日：2006-06-20

申请人： Leigh Canham ,  Timothy Cox ,  Armando Loni ,  Andrew Simons ,  Richard Blacker

发明人： Leigh Canham ,  Timothy Cox ,  Armando Loni ,  Andrew Simons ,  Richard Blacker

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/346

摘要： An electroluminescent device comprises a porous silicon region adjacent a bulk silicon region, together with a top electrical contact of transparent indium tin oxide and a bottom electrical contact of aluminium. The device includes a heavily doped region to provide an ohmic contact. The porous silicon region is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device has a rectifying p-n junction within the porous silicon region.

摘要翻译： 电致发光器件包括邻近体硅区域的多孔硅区域，以及透明铟锡氧化物的顶部电接触和铝的底部电接触。 该器件包括重掺杂区域以提供欧姆接触。 通过通过体硅的离子注入表面层进行阳极氧化来制造多孔硅区域。 硅离子注入和阳极氧化阶段之间保持未退火。 该器件在多孔硅区内具有整流p-n结。

公开(公告)号：US06426274B1

公开(公告)日：2002-07-30

申请号：US09616613

申请日：2000-07-14

申请人： Hiroshi Tayanaka

发明人： Hiroshi Tayanaka

IPC分类号： H01L2176

CPC分类号： H01L33/346 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/3063 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/76259 ,  H01L31/022425 ,  H01L31/03921 ,  H01L31/048 ,  H01L31/049 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1892 ,  H01L33/0054 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/0002 ,  H01L2924/14 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/928 ,  Y10S438/96 ,  Y10S438/977 ,  H01L2924/00

摘要： The present invention provides new and improved methods for making crystalline semiconductor thin films which may be bonded to different kinds of substrates. The thin films may be flexible. In accordance with preferred methods, a multi-layer porous structure including two or more porous layers having different porosities is formed in a semiconductor substrate. A semiconductor thin film is optionally grown on the porous structure. Electrodes and/or a desired support substrate may be attached to the grown film. The grown film or an upper portion of the semiconductor substrate is separated from the semiconductor substrate along a line of weakness defined in the porous structure. The separated thin film attached to the support substrate may be further processed to provide improved film products, solar panels and light emitting diode devices. These thin film semiconductors are excellent in crystallinity and may be inexpensively produced, thereby enabling production of solar cells and light emitting diodes at lower cost.

摘要翻译： 本发明提供了可以结合到不同种类的基底上的制造结晶半导体薄膜的新的和改进的方法。 薄膜可以是柔性的。 根据优选的方法，在半导体衬底中形成包括具有不同孔隙率的两个或多个多孔层的多层多孔结构。 任选地，在多孔结构上生长半导体薄膜。 电极和/或所需的支撑衬底可以附着到生长的膜上。 生长的膜或半导体衬底的上部沿着在多孔结构中限定的弱线与半导体衬底分离。 附着在支撑基板上的分离的薄膜可以被进一步处理以提供改进的薄膜产品，太阳能面板和发光二极管装置。 这些薄膜半导体的结晶性优异，可以廉价地制造，从而能够以更低的成本生产太阳能电池和发光二极管。

公开(公告)号：US06410436B2

公开(公告)日：2002-06-25

申请号：US09526541

申请日：2000-03-16

申请人： Kenji Yamagata ,  Satoshi Matsumura

发明人： Kenji Yamagata ,  Satoshi Matsumura

IPC分类号： H01L21302

CPC分类号： H01L21/67057 ,  B08B3/08 ,  C11D7/261 ,  C11D7/265 ,  C11D11/0047 ,  C11D11/007 ,  H01L21/67051 ,  H01L33/346

摘要： In order to clean a porous body in a short time without causing any change in its structure, the porous body is cleaned after the anodization is completed with a cleaning solution containing at least one of an alcohol and acetic acid.

摘要翻译： 为了在短时间内清洁多孔体而不引起其结构的任何变化，在用包含醇和乙酸中的至少一种的清洁溶液完成阳极氧化之后，清洁多孔体。

公开(公告)号：US06403391B1

公开(公告)日：2002-06-11

申请号：US09481075

申请日：2000-01-11

申请人： Kohsuke Nishimura ,  Yasuyuki Nagao

发明人： Kohsuke Nishimura ,  Yasuyuki Nagao

IPC分类号： H01L2100

CPC分类号： H01L33/346

摘要： At least a one conductivity type nanostructure PS layer whose thickness is controlled, and the opposite conductivity type nanostructure PS layer and a one conductivity type mesostructure PS layer arranged in contact with both these sides are comprised. Since the one conductivity type nanostructure PS layer is formed by anodizing the non-degenerate n-type crystalline silicon layer whose thickness is established in advance, the thickness which can provides a maximum luminescence efficiency can be obtained correctly. Then a semiconductor light emitting device whose luminescence efficiency is improved without increasing an unnecessary series resistance is provided. An inexpensive semiconductor light emitting device having a large light emitting area can be provided, since silicon wafer having a large diameter can be employed as the material for light emission.

摘要翻译： 包括至少一个导电类型的纳米结构PS层，其厚度被控制，并且包括相反导电型纳米结构PS层和与这两个侧面接触布置的一个导电型介孔结构PS层。 由于通过阳极氧化预先形成厚度的非简并型n型结晶硅层来形成一个导电型纳米结构PS层，所以可以正确地获得可提供最大发光效率的厚度。 然后提供一种在不增加不必要的串联电阻的情况下提高发光效率的半导体发光器件。 可以提供具有大的发光面积的便宜的半导体发光器件，因为可以使用具有大直径的硅晶片作为发光材料。

公开(公告)号：US06380550B1

公开(公告)日：2002-04-30

申请号：US08913414

申请日：1997-09-17

申请人： Leigh Trevor Canham ,  Timothy Ingram Cox ,  Armando Loni ,  Andrew John Simons ,  Richard Simon Blacker

发明人： Leigh Trevor Canham ,  Timothy Ingram Cox ,  Armando Loni ,  Andrew John Simons ,  Richard Simon Blacker

IPC分类号： H01L3300

CPC分类号： H01L33/346

摘要： An electroluminescent device (10) comprises a porous silicon region (22) adjacent a bulk silicon region (20), together with a top electrical contact (24) of transparent indium tin oxide and a bottom electrical contact (26) of aluminum. The device includes a heavily doped region (28) to provide an ohmic contact. The porous silicon region (22) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device (10) has a rectifying p-n junction within the porous silicon region (22).

摘要翻译： 电致发光器件（10）包括与体硅区域（20）相邻的多孔硅区域（22），以及透明氧化铟锡的顶部电接触件（24）和铝的底部电接触件（26）。 器件包括重掺杂区域（28）以提供欧姆接触。 多孔硅区域（22）通过通过体硅的离子注入表面层进行阳极氧化来制造。 硅离子注入和阳极氧化阶段之间保持未退火。 器件（10）在多孔硅区域（22）内具有整流p-n结。

公开(公告)号：US5935410A

公开(公告)日：1999-08-10

申请号：US933540

申请日：1997-09-19

申请人： Markus Thonissen ,  Michael Kruger ,  Hans Luth ,  Michael Gotz Berger ,  Wolfgang Theiss ,  Gilles Lerondel ,  Robert Romestain

发明人： Markus Thonissen ,  Michael Kruger ,  Hans Luth ,  Michael Gotz Berger ,  Wolfgang Theiss ,  Gilles Lerondel ,  Robert Romestain

IPC分类号： H01L21/3063 ,  H01L33/34 ,  C25F3/12 ,  C25F7/00

CPC分类号： H01L33/346 ,  H01L21/3063

摘要： A process for producing a structured area of porous silicon on a substrate, in which silicon is etched and structured by means of illumination, includes selectively aiming the illumination during or after the formation of the porous silicon directly at a selected area of a p-doped substrate in order to effect etching and structuring of the porous silicon in another area. A device for carrying out the process includes an illuminating system for supporting the etching process and for structuring the porous silicon, in which the illuminating system is selectively aimed during or after the formation of the porous silicon directly at a selected area of p-doped substrate in order to effect etching and structuring of the porous silicon in another area.

摘要翻译： 用于在衬底上制造多孔硅的结构化区域的方法，其中通过照明蚀刻和构造硅，包括在多孔硅形成过程中或之后直接在p掺杂的选定区域选择性地瞄准照明 衬底，以便在另一个区域中实现多孔硅的蚀刻和结构化。 用于执行该方法的装置包括用于支撑蚀刻工艺并用于构造多孔硅的照明系统，其中在直接在p掺杂衬底的选定区域形成多孔硅期间或之后选择性地瞄准照明系统 以便在另一区域中实现多孔硅的蚀刻和结构化。

公开(公告)号：US5852346A

公开(公告)日：1998-12-22

申请号：US929251

申请日：1997-09-15

申请人： Takuya Komoda ,  Peter Layton Francis Hemment

发明人： Takuya Komoda ,  Peter Layton Francis Hemment

IPC分类号： C23C14/14 ,  C23C14/48 ,  C23C14/58 ,  H01L33/34 ,  H01L21/265

CPC分类号： C23C14/14 ,  C23C14/48 ,  C23C14/58 ,  C23C14/5806 ,  C23C14/584 ,  H01L33/343 ,  H01L33/346

摘要： A process is provided for forming a silicon material which exhibits room temperature photoluminescence and/or electroluminescence. It comprises the steps of implanting silicon ions into a silicon oxide (SiO.sub.2) substrate and subsequently annealing the substrate at an elevated temperature for a period such as to bring about Si nanocrystal formation, the nanocrystals being dispersed through the SiO.sub.2 substrate. Photoluminescence of visible light from the resulting substrate is induced on irradiation of the substrate with e.g. ultraviolet light, and the substrate can also be incorporated into an electroluminescent device. The process is characterised by the features of implanting silicon ions at a dose from 1.times.10.sup.17 /cm.sup.2 to less than that required to produce saturation and by the use of an implantation energy of 100 keV or more. The resulting silicon nanocrystals dispersed through the SiO.sub.2 substrate have an average particle size of about 30 .ANG..

摘要翻译： 提供一种形成表现出室温光致发光和/或电致发光的硅材料的方法。 它包括以下步骤：将硅离子注入到氧化硅（SiO 2）衬底中，随后在升高的温度下退火衬底一段时间以产生Si纳米晶体形成，纳米晶体通过SiO 2衬底分散。 来自所得底物的可见光的光致发光在基板的照射下被诱导。 紫外光，并且基板也可以结合到电致发光器件中。 该方法的特征在于以1×10 17 / cm 2的剂量将硅离子注入到小于产生饱和所需的硅离子，并且通过使用100keV以上的注入能量。 通过SiO 2衬底分散的所得硅纳米晶体的平均粒度为约30。

公开(公告)号：US5644156A

公开(公告)日：1997-07-01

申请号：US420515

申请日：1995-04-12

申请人： Taketoshi Suzuki ,  Tadashi Sakai ,  Li Zhang ,  Taijun Murakami

发明人： Taketoshi Suzuki ,  Tadashi Sakai ,  Li Zhang ,  Taijun Murakami

IPC分类号： H05B33/10 ,  H01L29/16 ,  H01L29/47 ,  H01L31/028 ,  H01L31/173 ,  H01L31/18 ,  H01L33/34 ,  H01L33/42 ,  H05B33/12 ,  H05B33/22 ,  H01L27/095 ,  H01L29/812 ,  H01L31/07

CPC分类号： H01L33/346 ,  H01L29/16 ,  H01L29/47 ,  H01L31/0284 ,  H01L31/173 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A semiconductor device includes a porous silicon layer with an impurity concentration of 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3, in which a plurality of pores are formed, and a thermal oxide film 0.01 to 10 .mu.m thick formed on the expanded surfaces of the porous silicon layer, wherein said expanded surfaces include internal surface of said pores.

摘要翻译： 半导体器件包括杂质浓度为1×10 19至1×10 21 cm -3的多孔硅层，其中形成多个孔，并且形成在多孔硅层的扩展表面上的厚度为0.01至10μm的热氧化膜 ，其中所述扩展表面包括所述孔的内表面。