公开(公告)号：US11696504B2

公开(公告)日：2023-07-04

申请号：US17321252

申请日：2021-05-14

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Paolo Ferrari ,  Flavio Francesco Villa ,  Lucia Zullino ,  Andrea Nomellini ,  Luca Seghizzi ,  Luca Zanotti ,  Bruno Murari ,  Martina Scolari

IPC: H10N10/855 ,  H10N10/01 ,  H10N10/17

CPC classification number: H10N10/855 ,  H10N10/01 ,  H10N10/17

Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

公开(公告)号：US11001061B2

公开(公告)日：2021-05-11

申请号：US14981701

申请日：2015-12-28

Applicant: STMicroelectronics S.r.l.

Inventor： Dino Faralli ,  Laura Maria Castoldi ,  Paolo Ferrari ,  Marta Carminati

IPC: B41J2/16 ,  B41J2/14 ,  H01L21/02 ,  H01L21/311 ,  H01L21/285 ,  C23C16/34

Abstract: Methods for manufacturing a microfluidic delivery device comprising a semiconductor structure, such as silicon, are provided. In particular, the structure for delivering fluid may be formed from polycrystalline silicon, also called polysilicon, or epitaxial silicon. The microfluidic delivery device that predominantly uses semiconductor material, such as silicon, to form the structures that are in contact with the dispensed fluid results in a device that is compatible with a wide set of fluids and applications.

公开(公告)号：US09469109B2

公开(公告)日：2016-10-18

申请号：US14531830

申请日：2014-11-03

Applicant: STMicroelectronics S.r.l.

Inventor： Dino Faralli ,  Laura Maria Castoldi ,  Paolo Ferrari ,  Marta Carminati

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B41J2/1433 ,  B41J2/14129 ,  B41J2/1603 ,  B41J2/162 ,  B41J2/1623 ,  B41J2/1626 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1643

Abstract: Embodiments disclose herein are directed to a microfluidic delivery device that has a predominantly semiconductor structure, such as silicon. In particular, the structure for delivering fluid may be formed from polycrystalline silicon, also called polysilicon, or epitaxial silicon. The microfluidic delivery device that predominantly uses silicon based materials to form the structures that are in contact with the dispensed fluid results in a device that is compatible with a wide set of fluids and applications.

Abstract translation: 本文公开的实施方案涉及具有主要半导体结构（例如硅）的微流体递送装置。 特别地，用于输送流体的结构可以由也称为多晶硅的多晶硅或外延硅形成。 主要使用硅基材料以形成与分配的流体接触的结构的微流体递送装置导致与广泛流体和应用相容的装置。