公开(公告)号：US11873215B2

公开(公告)日：2024-01-16

申请号：US17684317

申请日：2022-03-01

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Enri Duqi ,  Marco Del Sarto ,  Lorenzo Baldo

IPC: B81C1/00 ,  B81B3/00 ,  B81C99/00

CPC classification number: B81C1/00325 ,  B81B3/0018 ,  B81C99/0005 ,  B81C2201/112

Abstract: A MEMS device formed by a substrate, having a surface; a MEMS structure arranged on the surface; a first coating region having a first Young's modulus, surrounding the MEMS structure at the top and at the sides and in contact with the surface of the substrate; and a second coating region having a second Young's modulus, surrounding the first coating region at the top and at the sides and in contact with the surface of the substrate. The first Young's modulus is higher than the second Young's modulus.

公开(公告)号：US11358862B2

公开(公告)日：2022-06-14

申请号：US16869159

申请日：2020-05-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Enri Duqi ,  Lorenzo Baldo ,  Marco Del Sarto ,  Mikel Azpeitia Urquia

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/00 ,  H01L29/84

Abstract: A micro-electro-mechanical device, comprising a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region facing the first buried cavity; a second cavity facing the first buried cavity; a decoupling trench extending from the monolithic body and separating the sensitive region from a peripheral portion of the monolithic body; a cap die, forming an ASIC, bonded to and facing the first face of the monolithic body; and a first gap between the cap die and the monolithic body. The device also comprises at least one spacer element between the monolithic body and the cap die; at least one stopper element between the monolithic body and the cap die; and a second gap between the stopper element and one between the monolithic body and the cap die. The second gap is smaller than the first gap.