公开(公告)号：US20180287378A1

公开(公告)日：2018-10-04

申请号：US15908878

申请日：2018-03-01

Applicant: STMicroelectronics International N.V.

Inventor： Radhakrishnan Sithanandam

IPC: H02H9/04 ,  H01L23/528 ,  H01L27/02 ,  H01L29/08 ,  H01L27/12 ,  H01L27/06 ,  H01L29/78

Abstract: Electrostatic discharge (ESD) protection is provided in circuits which use of a tunneling field effect transistor (TFET) or an impact ionization MOSFET (IMOS). These circuits are supported in silicon on insulator (SOI) and bulk substrate configurations to function as protection diodes, supply clamps, failsafe circuits and cutter cells. Implementations with parasitic bipolar devices provide additional parallel discharge paths.