公开(公告)号：US09012259B2

公开(公告)日：2015-04-21

申请号：US14157097

申请日：2014-01-16

Applicant: STMicroelectronics S.r.l.

Inventor： Francesco Foncellino ,  Giovanna Salzillo ,  Valeria Casuscelli ,  Luigi Giuseppe Occhipinti

IPC: H01L51/40 ,  H01L51/05 ,  H01L51/00

CPC classification number: H01L51/0545 ,  H01L51/0005 ,  H01L51/0023 ,  H01L51/0525

Abstract: The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process.

Abstract translation: 本公开描述了通过使用混合沉积/图案化方案在CMOS技术中形成底栅/底接触有机TFT的工艺策略。 为此，基于光刻工艺形成栅极电极，栅极电介质材料和漏极和源极电极，而通过使用空间选择性印刷工艺将有机半导体材料提供为最后层。