-
公开(公告)号：US10892292B2
公开(公告)日：2021-01-12
申请号：US16386826
申请日：2019-04-17
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Daniel Benoit , Olivier Hinsinger , Emmanuel Gourvest
IPC: H01L27/146
Abstract: A back-side illuminated image sensor includes memory regions formed in a semiconductor wafer. Each memory region is located between two opaque walls which extend into the semiconductor wafer. An opaque screen is arranged at the rear surface of the memory region and in electrical contact with the opaque walls.
Search Results
11
records
(took 0.045 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
