公开(公告)号：US09379030B2

公开(公告)日：2016-06-28

申请号：US14013862

申请日：2013-08-29

申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.

发明人： Shiro Ninomiya ,  Tadanobu Kagawa ,  Toshio Yumiyama ,  Akira Funai ,  Takashi Kuroda

IPC分类号： H01L21/66 ,  H01J37/08 ,  C23C14/48 ,  H01J37/304 ,  H01J37/317

CPC分类号： H01L22/14 ,  C23C14/48 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/0206

摘要： Provided is an ion implantation method of transporting ions generated by an ion source to a wafer and implanting the ions into the wafer by irradiating an ion beam on the wafer, including, during the ion implantation into the wafer, using a plurality of detection units which can detect an event having a possibility of discharge and determining a state of the ion beam based on existence of detected event having a possibility of discharge and a degree of influence of the event on the ion beam.

摘要翻译： 提供了一种将由离子源产生的离子输送到晶片并且通过在晶片上照射离子束将离子注入晶片的离子注入方法，包括在离子注入晶片期间使用多个检测单元， 可以基于具有放电可能性的检测事件的存在和事件对离子束的影响程度来检测具有放电可能性的事件和确定离子束的状态。