公开(公告)号：US6103586A

公开(公告)日：2000-08-15

申请号：US364025

申请日：1999-07-30

申请人： Sundar Srinivasan Chetlur ,  James Theodore Clemens ,  Sailesh Mansinh Merchant ,  Pradip Kumar Roy ,  Hem M. Vaidya

发明人： Sundar Srinivasan Chetlur ,  James Theodore Clemens ,  Sailesh Mansinh Merchant ,  Pradip Kumar Roy ,  Hem M. Vaidya

IPC分类号： H01L21/8242 ,  H01L21/02 ,  H01L21/768 ,  H01L27/108 ,  H01L21/20

CPC分类号： H01L28/60 ,  H01L21/76838 ,  H01L21/76895

摘要： A method for making an integrated circuit capacitor includes forming a first dielectric layer adjacent a substrate, forming a first opening in the first dielectric layer, filling the first opening with a conductive material to define a first metal plug, and forming a trench in the first dielectric layer adjacent the first metal plug. An interconnection line lines the first trench and contacts the first metal plug to define anchoring recesses on opposite sides of the first metal plug. The method further includes forming a second dielectric layer on the interconnection line, forming a second opening in the second dielectric layer, and filling the second opening with a conductive metal to define a second metal plug having a body portion and anchor portions extending downward from the body portion for engaging the anchoring recesses to anchor the second metal plug. A second trench is formed in the second dielectric layer adjacent the second metal plug, and is aligned with the first trench. Because the second metal plug is anchored, a depth of the second trench can be greater without the metal plug becoming loose and separating from the underlying interconnection line. The electrodes and dielectric layers of the capacitor are formed so that they line the second trench.

摘要翻译： 一种制造集成电路电容器的方法包括：在基片附近形成第一电介质层，在第一电介质层中形成第一开口，用导电材料填充第一开口以限定第一金属插塞，并在第一电介质层中形成沟槽 电介质层邻近第一金属插头。 互连线对准第一沟槽并接触第一金属插塞以在第一金属插塞的相对侧上限定锚定凹槽。 所述方法还包括在所述互连线上形成第二电介质层，在所述第二电介质层中形成第二开口，并用导电金属填充所述第二开口，以限定第二金属插塞，所述第二金属插塞具有主体部分和从所述第二介质层向下延伸的固定部分 主体部分，用于接合所述锚定凹部以锚定所述第二金属插塞。 在与第二金属插塞相邻的第二电介质层中形成第二沟槽，并且与第一沟槽对准。 由于第二金属插塞被锚固，所以第二沟槽的深度可以更大，而不会使金属插头松动并与下面的互连线分离。 电容器的电极和电介质层形成为使得它们与第二沟槽对齐。