公开(公告)号：US06291848B1

公开(公告)日：2001-09-18

申请号：US09364767

申请日：1999-07-30

申请人： Sundar Srinivasan Chetlur ,  James Theodore Clemens ,  Sailesh Mansinh Merchant ,  Pradip Kumar Roy ,  Hem M. Vaidya

发明人： Sundar Srinivasan Chetlur ,  James Theodore Clemens ,  Sailesh Mansinh Merchant ,  Pradip Kumar Roy ,  Hem M. Vaidya

IPC分类号： H01L27108

CPC分类号： H01L21/76838 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/60

摘要： An integrated circuit capacitor includes a substrate, a first dielectric layer adjacent the substrate and having a first trench therein, and a first metal plug extending upwardly into the first trench. An interconnection line overlies the first trench and contacts the first metal plug to define anchoring recesses on opposite sides of the first metal plug. A second dielectric layer is on the interconnection line and has a second trench therein. A second metal plug extends upwardly into the second trench. More particularly, the second metal plug includes a body portion extending upwardly into the second trench, and anchor portions connected to the body portion and engaging the anchoring recesses to anchor the second metal plug to the interconnection line. Because the second metal plug is anchored, a depth of the second trench can be greater without the metal plug becoming loose and separating from the underlying interconnection line.

摘要翻译： 集成电路电容器包括衬底，与衬底相邻并且在其中具有第一沟槽的第一电介质层和向上延伸到第一沟槽中的第一金属插塞。 互连线覆盖在第一沟槽上并接触第一金属插塞以在第一金属插塞的相对侧上限定锚定凹槽。 第二介电层位于互连线上并且在其中具有第二沟槽。 第二金属插头向上延伸到第二沟槽中。 更具体地，第二金属插头包括向上延伸到第二沟槽中的主体部分，以及连接到主体部分并且与固定凹部接合并将第二金属插头固定到互连线的锚定部分。 由于第二金属插塞被锚固，所以第二沟槽的深度可以更大，而不会使金属插头松动并与下面的互连线分离。

公开(公告)号：US6103586A

公开(公告)日：2000-08-15

申请号：US364025

申请日：1999-07-30

申请人： Sundar Srinivasan Chetlur ,  James Theodore Clemens ,  Sailesh Mansinh Merchant ,  Pradip Kumar Roy ,  Hem M. Vaidya

发明人： Sundar Srinivasan Chetlur ,  James Theodore Clemens ,  Sailesh Mansinh Merchant ,  Pradip Kumar Roy ,  Hem M. Vaidya

IPC分类号： H01L21/8242 ,  H01L21/02 ,  H01L21/768 ,  H01L27/108 ,  H01L21/20

CPC分类号： H01L28/60 ,  H01L21/76838 ,  H01L21/76895

摘要： A method for making an integrated circuit capacitor includes forming a first dielectric layer adjacent a substrate, forming a first opening in the first dielectric layer, filling the first opening with a conductive material to define a first metal plug, and forming a trench in the first dielectric layer adjacent the first metal plug. An interconnection line lines the first trench and contacts the first metal plug to define anchoring recesses on opposite sides of the first metal plug. The method further includes forming a second dielectric layer on the interconnection line, forming a second opening in the second dielectric layer, and filling the second opening with a conductive metal to define a second metal plug having a body portion and anchor portions extending downward from the body portion for engaging the anchoring recesses to anchor the second metal plug. A second trench is formed in the second dielectric layer adjacent the second metal plug, and is aligned with the first trench. Because the second metal plug is anchored, a depth of the second trench can be greater without the metal plug becoming loose and separating from the underlying interconnection line. The electrodes and dielectric layers of the capacitor are formed so that they line the second trench.

摘要翻译： 一种制造集成电路电容器的方法包括：在基片附近形成第一电介质层，在第一电介质层中形成第一开口，用导电材料填充第一开口以限定第一金属插塞，并在第一电介质层中形成沟槽 电介质层邻近第一金属插头。 互连线对准第一沟槽并接触第一金属插塞以在第一金属插塞的相对侧上限定锚定凹槽。 所述方法还包括在所述互连线上形成第二电介质层，在所述第二电介质层中形成第二开口，并用导电金属填充所述第二开口，以限定第二金属插塞，所述第二金属插塞具有主体部分和从所述第二介质层向下延伸的固定部分 主体部分，用于接合所述锚定凹部以锚定所述第二金属插塞。 在与第二金属插塞相邻的第二电介质层中形成第二沟槽，并且与第一沟槽对准。 由于第二金属插塞被锚固，所以第二沟槽的深度可以更大，而不会使金属插头松动并与下面的互连线分离。 电容器的电极和电介质层形成为使得它们与第二沟槽对齐。