公开(公告)号：US20070154482A1

公开(公告)日：2007-07-05

申请号：US11519954

申请日：2006-09-12

申请人： Vikas Sukhatme ,  S. Karumanchi ,  Samir Parikh

发明人： Vikas Sukhatme ,  S. Karumanchi ,  Samir Parikh

IPC分类号： A61K39/395 ,  G01N33/53 ,  A61K31/573 ,  A61K31/43 ,  A61K31/545

CPC分类号： C07K16/22 ,  A61K31/4409 ,  A61K31/551 ,  A61K38/1891 ,  A61K49/0008 ,  C07K14/515 ,  C07K2317/76 ,  C12N15/113 ,  C12N15/1138 ,  C12N2310/14 ,  C12Q1/6883 ,  C12Q2600/106 ,  C12Q2600/158 ,  G01N33/6893 ,  G01N2333/485 ,  G01N2333/515 ,  G01N2333/525 ,  G01N2333/5412 ,  G01N2333/545 ,  G01N2333/9129 ,  G01N2800/32

摘要： Disclosed herein are methods for treating a vascular leak disorder, hypotension, or a procoagulant state using angiopoietin-2 (Ang-2) antagonist compounds. Also disclosed are methods for treating a vascular leak disorder associated with high dose IL-2 therapy using angiopoietin-2 antagonist compounds. Methods for diagnosing and monitoring vascular leak disorders, hypotension, or a procoagulant state that include the measurement of Ang-2 polypeptide or nucleic acid levels are also disclosed. Methods for inducing a vascular leak using an Ang-2 agonist are also disclosed.

摘要翻译： 本文公开了使用血管生成素-2（Ang-2）拮抗剂化合物治疗血管渗漏障碍，低血压或促凝血状态的方法。 还公开了使用血管生成素-2拮抗剂化合物治疗与高剂量IL-2治疗相关的血管渗漏障碍的方法。 还公开了用于诊断和监测包括Ang-2多肽或核酸水平测量的血管渗漏障碍，低血压或促凝血状态的方法。 还公开了使用Ang-2激动剂诱导血管渗漏的方法。

公开(公告)号：US07233005B2

公开(公告)日：2007-06-19

申请号：US11341925

申请日：2006-01-27

申请人： Snezana Bogdanovich ,  Lawrence Cheung ,  Zhenxue Jing ,  Samir Parikh

发明人： Snezana Bogdanovich ,  Lawrence Cheung ,  Zhenxue Jing ,  Samir Parikh

IPC分类号： G01T1/24

CPC分类号： H01L27/14676 ,  H01L31/115

摘要： A flat panel x-ray imager exhibiting reduced ghosting effects and overvoltage protection by appropriate leakage current characteristics of the thin-film transistor array. A top electrode of a suitable material is directly on a non-insulating organic layer. The organic layer is directly on an amorphous selenium-based charge generator layer allowing charge transport across the layer, thereby reducing ghosting. The thin-film transistors have leakage current that rises relatively slowly with voltage across the transistor within a range that matches exposure through an object being imaged but rises at a sufficiently higher rate within a higher range to provide protection even when a corresponding region of the charge generator layer receives greater amounts of x-rays.

摘要翻译： 平板X射线成像仪通过薄膜晶体管阵列的适当的泄漏电流特性显现出减小的重影效应和过电压保护。 合适材料的顶部电极直接在非绝缘的有机层上。 有机层直接位于基于无定形硒的电荷发生器层上，允许电荷跨越层传输，从而减少重影。 薄膜晶体管具有相对缓慢升高的漏电流，该电流在与被成像的物体匹配的曝光的范围内相对缓慢地升高，但是在更高的范围内以足够高的速率上升，从而即使当电荷的相应区域 发电机层接收更大量的X射线。

公开(公告)号：US20060180768A1

公开(公告)日：2006-08-17

申请号：US11341925

申请日：2006-01-27

申请人： Snezana Bogdanovich ,  Lawrence Cheung ,  Zhenxue Jing ,  Samir Parikh

发明人： Snezana Bogdanovich ,  Lawrence Cheung ,  Zhenxue Jing ,  Samir Parikh

IPC分类号： G01T1/24

CPC分类号： H01L27/14676 ,  H01L31/115

摘要： A flat panel x-ray imager exhibiting reduced ghosting effects and overvoltage protection by appropriate leakage current characteristics of the thin-film transistor array. A top electrode of a suitable material is directly on a non-insulating organic layer. The organic layer is directly on an amorphous selenium-based charge generator layer allowing charge transport across the layer, thereby reducing ghosting. The thin-film transistors have leakage current that rises relatively slowly with voltage across the transistor within a range that matches exposure through an object being imaged but rises at a sufficiently higher rate within a higher range to provide protection even when a corresponding region of the charge generator layer receives greater amounts of x-rays.

摘要翻译： 平板X射线成像仪通过薄膜晶体管阵列的适当的泄漏电流特性表现出减小的重影效应和过电压保护。 合适材料的顶部电极直接在非绝缘的有机层上。 有机层直接位于基于无定形硒的电荷发生器层上，允许电荷跨越层传输，从而减少重影。 薄膜晶体管具有相对缓慢升高的漏电流，该电流在与被成像的物体匹配的曝光的范围内相对缓慢地升高，但是在更高的范围内以足够高的速率上升，从而即使当电荷的相应区域 发电机层接收更大量的X射线。