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公开(公告)号：US20240304744A1
公开(公告)日：2024-09-12
申请号：US18316379
申请日：2023-05-12
IPC分类号： H01L31/115 , G01T1/24 , G01T1/29
CPC分类号： H01L31/115 , G01T1/241 , G01T1/2928
摘要： A radiation detection element according to the present invention includes: a single-crystal semiconductor substrate configured to convert incident radiation into an electric charge; a first cathode electrode provided on a first main surface of the single-crystal semiconductor substrate, the first cathode electrode having a first thickness; a second cathode electrode provided so as to face a side surface of the single-crystal semiconductor substrate, the second cathode electrode having a second thickness that is smaller than the first thickness; and an anode electrode provided on a second main surface of the single-crystal semiconductor substrate, the second main surface being on an opposite side of the first main surface.
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公开(公告)号：US20240302298A1
公开(公告)日：2024-09-12
申请号：US18297178
申请日：2023-04-07
IPC分类号： G01N23/046 , G01T1/24 , H01L31/115
CPC分类号： G01N23/046 , G01T1/247 , H01L31/115
摘要： A radiation detector comprising a radiation sensor obtained by arranging first electrodes on a semiconductor substrate configured to convert incident radiation into charges, an integrated circuit, and an interposer is provided. The interposer comprises first terminals arranged on a first surface facing the sensor and connected to the first electrodes, and second terminals arranged on a second surface facing the integrated circuit and connected to the integrated circuit. Each of the first terminals is connected to one second terminal. The number of the second terminals is smaller than the first terminals. The substrate comprises a third surface on which the first electrodes are arranged and a fourth surface on which second electrodes are arranged. The detector further comprises a selector configured to select the second electrode from the second electrodes to supply a potential for converting the incident radiation into charges.
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公开(公告)号：US20240136462A1
公开(公告)日：2024-04-25
申请号：US18499141
申请日：2023-10-30
IPC分类号： H01L31/115 , H01J37/244 , H01J37/28
CPC分类号： H01L31/115 , H01J37/244 , H01J37/28 , H01J2237/2441
摘要： The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.
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公开(公告)号：US11843069B2
公开(公告)日：2023-12-12
申请号：US16703294
申请日：2019-12-04
IPC分类号： H01L31/115 , H01J37/244 , H01J37/28
CPC分类号： H01L31/115 , H01J37/244 , H01J37/28 , H01J2237/2441
摘要： The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.
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公开(公告)号：US11837624B2
公开(公告)日：2023-12-05
申请号：US17705850
申请日：2022-03-28
发明人： Peiyan Cao , Yurun Liu
IPC分类号： H01L27/146 , H01L31/18 , H01L31/08 , H01L31/115 , G01T1/24 , H01L21/02 , H01L31/0296
CPC分类号： H01L27/14696 , G01T1/24 , H01L21/02562 , H01L27/14634 , H01L31/085 , H01L31/1836 , H01L27/14607 , H01L27/14658 , H01L31/02966 , H01L31/115
摘要： Disclosed herein are a radiation detector and a method of making it. The radiation detector is configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate charge carriers. The semiconductor single crystal may be a CdZnTe single crystal or a CdTe single crystal. The method may comprise forming a recess into a substrate of semiconductor; forming a semiconductor single crystal in the recess; and forming a heavily doped semiconductor region in the substrate. The semiconductor single crystal has a different composition from the substrate. The heavily doped region is in electrical contact with the semiconductor single crystal and embedded in a portion of intrinsic semiconductor of the substrate.
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公开(公告)号：US20190252454A1
公开(公告)日：2019-08-15
申请号：US16276107
申请日：2019-02-14
申请人： Tianma Japan, Ltd.
发明人： Hiroyuki SEKINE
IPC分类号： H01L27/146 , H04N5/32 , H01L31/115
CPC分类号： H01L27/14659 , H01L27/14612 , H01L31/115 , H04N5/32
摘要： An image sensor: includes a pixel matrix in which pixels are disposed in a matrix, each pixel including a photoelectric conversion element and a switching element connected to the photoelectric conversion element; performs selection processing, on each pixel row of the pixel matrix, including selecting a pixel row and outputting a signal to the selected pixel row to make switching elements conductive; performs detection processing of detecting signals from the photoelectric conversion elements in the selected pixel row; and performs the selection processing based on received control signals, wherein the control signals include first control signals having a cycle shorter than a first period in which the selection processing and the detection processing are performed on all pixel rows, and wherein the cycle is equal to or shorter than a second period in which the selection processing and the detection processing are performed on one pixel row.
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公开(公告)号：US20180315882A1
公开(公告)日：2018-11-01
申请号：US15581549
申请日：2017-04-28
IPC分类号： H01L31/115 , H01L31/18 , H01L31/0352 , H01L31/0288 , H01L31/0224
CPC分类号： H01L31/115 , H01L31/022408 , H01L31/0288 , H01L31/035272 , H01L31/1804 , H01L31/1864 , H01L31/1872 , H01L31/20
摘要： A method for forming a semiconductor device includes forming an amorphous semiconductor layer adjacent to a lightly doped region of a semiconductor wafer. The lightly doped region forms at least part of a back side of the semiconductor wafer, and the lightly doped region has a first conductivity type. The method further includes incorporating dopants into the amorphous semiconductor layer during or after forming the amorphous semiconductor layer. The method further includes annealing the amorphous semiconductor layer to transform at least a part of the amorphous semiconductor layer into a substantially monocrystalline semiconductor layer and to form a highly doped region in the monocrystalline semiconductor layer at the back side of the semiconductor wafer. The highly doped region has the first conductivity type.
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公开(公告)号：US10078143B2
公开(公告)日：2018-09-18
申请号：US14986001
申请日：2015-12-31
发明人： Peter Micah Sandvik , Stanislav Ivanovich Soloviev , Sergei Ivanovich Dolinsky , James Jay McMahon , Sabarni Palit
IPC分类号： G01T1/24 , H01L31/115
CPC分类号： G01T1/248 , G01T1/2018 , G01T1/208 , G01T1/249 , H01L27/14663 , H01L31/02027 , H01L31/107 , H01L31/115
摘要： A solid state photomultiplier includes at least one microcell configured to generate an initial analog signal when exposed to optical photons. The solid state photomultiplier further includes a quench circuit electrically coupled with the at least one microcell. The quench circuit includes at least one quench resistor configured to exhibit a substantially constant temperature coefficient of resistance over a selected temperature range.
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公开(公告)号：US10056425B2
公开(公告)日：2018-08-21
申请号：US15309059
申请日：2015-07-09
发明人： Peiyan Cao , Yurun Liu
IPC分类号： H01L27/146 , H01L31/115 , H01L31/02 , H01L31/0224 , H01L31/0304 , H01L31/18 , H02S40/44 , H01L31/09 , G01T1/24
CPC分类号： H01L27/14661 , G01T1/24 , H01L27/14636 , H01L27/14659 , H01L27/1469 , H01L27/14694 , H01L31/02005 , H01L31/022408 , H01L31/0304 , H01L31/09 , H01L31/115 , H01L31/184 , H01L31/1892 , H02S40/44
摘要： Disclosed herein is a method of making an apparatus suitable for detecting x-ray, the method comprising: attaching a chip comprising an X-ray absorption layer to a surface of a substrate, wherein the surface is electrically conductive; thinning the chip; forming an electrical contact in the chip; bonding an electronic layer to the chip such that the electrical contact of the chip is electrically connected to an electrical contact of the electronic layer.
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10.发明授权公开(公告)号：US09966492B1
公开(公告)日：2018-05-08
申请号：US15526853
申请日：2016-06-22
发明人： Xiaoxiang He , Xiaojing Qi
IPC分类号： G01T1/24 , H01L31/115 , H01L31/075
CPC分类号： H01L31/115 , G01T1/24 , H01L31/0352 , H01L31/075
摘要： The present application provides a PIN photodiode, an X-ray detecting pixel, an X-ray detecting apparatus and a detecting method thereof. The PIN photodiode may comprise a first doped layer, an intrinsic layer disposed over the first doped layer, and a second doped layer disposed over the intrinsic layer. The photodiode further comprises a third doped layer disposed over the second doped layer.
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