公开(公告)号：US20210359181A1

公开(公告)日：2021-11-18

申请号：US17098145

申请日：2020-11-13

Applicant: Samsung Display Co., Ltd.

Inventor： Junhee LEE ,  Yeongho LEE ,  Chanyoung KIM ,  Chiwook AN ,  Choongyoul IM ,  Dayoung JUNG ,  Seongmin CHO ,  Miran JI

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/56

Abstract: A display apparatus includes a substrate having a display area and a peripheral area surrounding the display area, a first initialization voltage line on the substrate, an organic film layer on the first initialization voltage line and having a first contact hole exposing at least a portion of the first initialization voltage line, and a bridge wiring on the organic film layer corresponding to the peripheral area, and in contact with the first initialization voltage line through the first contact hole, wherein the organic film layer corresponding to the peripheral area has a groove or dummy hole, each of the groove and the dummy hole being adjacent to the first contact hole.

公开(公告)号：US20170365216A1

公开(公告)日：2017-12-21

申请号：US15693762

申请日：2017-09-01

Applicant: Samsung Display Co., Ltd.

Inventor： Juwon YOON ,  Iljeong LEE ,  Jiseon LEE ,  Choongyoul IM

IPC: G09G3/3233 ,  H01L27/32

CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/0262 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276

Abstract: An organic light-emitting display apparatus including an organic light-emitting diode emitting visible light, a driving thin film transistor driving the organic light-emitting diode, and a compensation thin film transistor. The compensation thin film transistor includes a compensation gate electrode, a compensation semiconductor layer, a compensation source electrode, and a compensation drain electrode. The compensation gate electrode includes a first gate electrode, and a second gate electrode electrically connected to the first gate electrode. The compensation drain electrode is electrically connected to the driving gate electrode of the driving thin film transistor. The compensation semiconductor layer includes a first semiconductor region overlapping the first gate electrode and a second semiconductor region overlapping the second gate electrode and disposed further from the compensation drain electrode than the first semiconductor region, and an area of the first semiconductor region is different than an area of the second semiconductor region.