公开(公告)号：US20170317216A1

公开(公告)日：2017-11-02

申请号：US15412278

申请日：2017-01-23

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kwang Soo LEE ,  Shin Hyuk YANG ,  Doo Hyun KIM ,  Jee Hoon KIM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: A transistor panel includes a channel region including an oxide of a first metal, a source region and a drain region, each including the first metal, wherein the channel region is disposed between the source and drain regions, and wherein the channel region is connected to the source and drain regions, an insulation layer disposed on the channel region, an upper electrode disposed on the insulation layer, an interlayer insulation layer disposed on the upper electrode, the source region and the drain region, and a barrier layer including a first portion disposed between the interlayer insulation layer and each of the source and drain regions, wherein the first portion of the barrier layer contacts each of the source and drain regions. The upper electrode and the barrier layer each comprise a second metal.