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公开(公告)号:US20200343275A1
公开(公告)日:2020-10-29
申请号:US16818310
申请日:2020-03-13
Applicant: Samsung Display Co., LTD.
Inventor: Geun Chul PARK , Joon Seok PARK , Tae Sang KIM , Yeon Keon MOON , Jun Hyung LIM , Kyung Jin JEON
IPC: H01L27/12
Abstract: A display device and a method of manufacturing the same. The display device includes a pixel connected to a scan line and a data line intersecting the scan line, and a driving transistor and a switching transistor disposed in the pixel. The driving transistor includes a substrate, a first active layer disposed on the substrate, a first gate electrode disposed on the first active layer, and a second insulating film contacting the first gate electrode and the first gate electrode. The switching transistor includes a second active layer disposed on the substrate, a second gate electrode disposed on the second active layer, a first insulating film contacting the second active layer and the second gate electrode, and a second insulating film covering the first insulating film. The first insulating film and the second insulating film are made of different materials from each other.
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12.
公开(公告)号:US20200098924A1
公开(公告)日:2020-03-26
申请号:US16563699
申请日:2019-09-06
Applicant: Samsung Display Co., Ltd.
Inventor: Tae Sang KIM , Joon Seok PARK , Kwang Suk KIM , Yeon Keon MOON , Geunchul PARK , Jun Hyung LIM , Kyung Jin JEON
IPC: H01L29/786 , H01L27/12 , H01L21/467 , H01L29/66
Abstract: A transistor substrate may include: a substrate; an active pattern formed on the substrate, the active pattern including an oxide semiconductor that contains tin (Sn), and the active pattern including a source region, a drain region, and a channel region that is formed between the source region and the drain region; a source protective pattern formed on the source region; a drain protective pattern formed on the drain region; a gate electrode overlapping at least a portion of the channel region; an insulation interlayer covering the source protective pattern and the drain protective pattern; a source electrode formed on the insulation interlayer, the source electrode being in contact with the source protective pattern through a source contact hole that is formed in the insulation interlayer; and a drain electrode formed on the insulation interlayer, the drain electrode being in contact with the drain protective pattern through a drain contact hole that is formed in the insulation interlayer.
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公开(公告)号:US20240413174A1
公开(公告)日:2024-12-12
申请号:US18807906
申请日:2024-08-16
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Kyung Jin JEON , Eok Su KIM , Joon Seok PARK , So Young KOO , Tae Sang KIM , Jun Hyung LIM
IPC: H01L27/12
Abstract: According to some embodiments of the present disclosure, a display device includes an active pattern including a metal oxide, a gate electrode overlapping the active pattern, a first capacitor electrode spaced apart from the active pattern and including a conductive oxide, and a second capacitor electrode on the first capacitor electrode.
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公开(公告)号:US20210328102A1
公开(公告)日:2021-10-21
申请号:US17171451
申请日:2021-02-09
Applicant: Samsung Display Co., LTD.
Inventor: Joon Seok PARK , Myoung Hwa KIM , Tae Sang KIM , Yeon Keon MOON , Geun Chul PARK , Jun Hyung LIM , Hye Lim CHOI
Abstract: A display device may include a first gate electrode on a substrate, a buffer layer on the first gate electrode, a first active pattern on the buffer layer, overlapping the first gate electrode, and including an oxide semiconductor, a source pattern and a drain pattern respectively on ends of the first active pattern, an insulation layer overlapping the source pattern and the drain pattern on the buffer layer, an oxygen supply pattern on the insulation layer, overlapping the first active pattern, and supplying oxygen to the first active pattern, a second active pattern on the insulation layer and spaced apart from the oxygen supply pattern, the second active pattern including a channel region, and a source region and a drain region, an insulation pattern on the channel region of the second active pattern, and a second gate electrode on the insulation pattern.
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公开(公告)号:US20210036029A1
公开(公告)日:2021-02-04
申请号:US16876984
申请日:2020-05-18
Applicant: Samsung Display Co., LTD.
Inventor: Joon Seok PARK , Myoung Hwa KIM , Tae Sang KIM , Hyung Jun KIM , Yeon Keon MOON , Geun Chul PARK , Sang Woo SOHN , Jun Hyung LIM , Kyung Jin JEON , Hye Lim CHOI
IPC: H01L27/12 , H01L27/32 , G02F1/1362
Abstract: A display device includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including an oxide semiconductor and a first active layer, a first gate insulating layer disposed on the first semiconductor layer and the buffer layer, a second semiconductor layer disposed on the first gate insulating layer and including an oxide semiconductor, a second active layer, and a first oxide layer on the first active layer, a second gate insulating layer disposed on the second semiconductor layer, a first conductive layer disposed on the second gate insulating layer, an insulating layer disposed on the first conductive layer, a second conductive layer disposed on the insulating layer, a passivation layer disposed on the second conductive layer, and a third conductive layer disposed on the first passivation layer.
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公开(公告)号:US20210036028A1
公开(公告)日:2021-02-04
申请号:US16836651
申请日:2020-03-31
Applicant: Samsung Display Co., Ltd.
Inventor: Myoung Hwa KIM , Joon Seok PARK , So Young KOO , Tae Sang KIM , Yeon Keon MOON , Geun Chul PARK , Jun Hyung LIM , Kyung Jin JEON
IPC: H01L27/12 , H01L29/24 , H01L29/786 , H01L29/66
Abstract: A display device includes a pixel connected to a scan line, and a data line crossing the scan line, wherein the pixel includes a light-emitting element, a driving transistor configured to control a driving current supplied to the light-emitting element according to a data voltage applied from the data line, and a first switching transistor configured to apply the data voltage of the data line to the driving transistor according to a scan signal that is applied to the scan line. The driving transistor includes a first active layer including an oxide semiconductor, and a first oxide layer disposed on the first active layer and including an oxide semiconductor. The first switching transistor includes a second active layer including an oxide semiconductor, and the first oxide layer is not disposed on the second active layer.
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公开(公告)号:US20210020717A1
公开(公告)日:2021-01-21
申请号:US16843764
申请日:2020-04-08
Applicant: Samsung Display Co., Ltd.
Inventor: Hyung Jun KIM , Myoung Hwa KIM , Tae Sang KIM , Yeon Keon MOON , Joon Seok PARK , Sang Woo SOHN , Sang Won SHIN , Jun Hyung LIM , Hye Lim CHOI
IPC: H01L27/32 , H01L29/786 , H01L29/24 , H01L29/66 , H01L21/02 , H01L21/4763 , H01L21/465 , H01L21/4757
Abstract: A display device and a method for fabricating the same are provided. The display device comprises pixels connected to scan lines, and to data lines crossing the scan lines, each of the pixels including a light emitting element, and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from the data line, the first transistor including a first active layer having an oxide semiconductor, and a first oxide layer on the first active layer and having a crystalline oxide containing tin (Sn).
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公开(公告)号:US20200075641A1
公开(公告)日:2020-03-05
申请号:US16529516
申请日:2019-08-01
Applicant: Samsung Display Co., Ltd.
Inventor: Joon Seok PARK , Tae Sang KIM , Yeon Keon MOON , Geun Chul PARK , Jun Hyung LIM , Kyung Jin JEON
Abstract: A display device includes: a substrate including a display area and a non-display area; a gate driver disposed on the substrate in the non-display area and including a plurality of stages that generate a gate signal and output the gate signal to the display area; a switching transistor and a driving transistor disposed on the substrate in the display area; and a light emitting diode connected to the driving transistor, wherein each of the plurality of stages may include a plurality of transistors, wherein a channel layer of the driving transistor includes a first oxide semiconductor material, and a channel layer of the plurality of transistors included in each of the plurality of stages includes a second oxide semiconductor material, wherein the first oxide semiconductor material is different from the second oxide semiconductor material, and wherein the second oxide semiconductor material may include tin.
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19.
公开(公告)号:US20200052056A1
公开(公告)日:2020-02-13
申请号:US16539761
申请日:2019-08-13
Applicant: Samsung Display Co., Ltd.
Inventor: Joon Seok PARK , Yeon Keon MOON , Kwang Suk KIM , Tae Sang KIM , Geunchul PARK , Kyung Jin JEON
Abstract: An organic light emitting diode display device includes a substrate, a first oxide transistor, a second oxide transistor, and a sub-pixel structure. The substrate has a display region including a plurality of sub-pixel regions and a peripheral region located in a side of the display region. The first oxide transistor is disposed in the peripheral region on the substrate, and includes a first oxide semiconductor pattern that includes tin (Sn). The second oxide transistor is disposed in the sub-pixel regions each on the substrate, and includes a second oxide semiconductor pattern. The sub-pixel structure is disposed on the second oxide transistor.
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