公开(公告)号：US08853016B2

公开(公告)日：2014-10-07

申请号：US13758869

申请日：2013-02-04

Applicant: Samsung Display Co., Ltd.

Inventor： Hye-Hyang Park ,  Ki-Ju Im ,  Yong-Sung Park

IPC: H01L21/00 ,  H01L51/40 ,  H01L29/66 ,  H01L51/00 ,  H01L29/786 ,  H01L27/32 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/78648 ,  H01L29/7869 ,  H01L51/0001

Abstract: A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening.

Abstract translation: 包括双栅极TFT的双栅极薄膜晶体管（TFT）和有机发光二极管（OLED）显示装置包括双栅极薄膜晶体管（TFT），其包括：基板上的第一栅电极; 在第一栅电极上的有源层; 有源层上的源极和漏极; 所述基板上的平坦化层和所述源极和漏极，并且具有对应于所述有源层的开口; 和第二栅电极。