公开(公告)号：US20220093804A1

公开(公告)日：2022-03-24

申请号：US17544353

申请日：2021-12-07

申请人： Samsung Display Co., Ltd.

发明人： Do Hyung KIM ,  Gun Hee KIM ,  Hyeon Sik KIM ,  Sang Ho PARK ,  Joo Hee JEON

IPC分类号： H01L29/786 ,  H01L29/417 ,  H01L27/32 ,  H01L29/08

摘要： A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.