ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME 审中-公开
    有机发光二极管显示器及其制造方法

    公开(公告)号:US20160218151A1

    公开(公告)日:2016-07-28

    申请号:US14879753

    申请日:2015-10-09

    摘要: Disclosed herein is an organic light emitting diode display, including: an insulating substrate including a display area in which a plurality of pixels are formed and a peripheral area positioned around the display area; a touch signal transfer wiring positioned in the peripheral area on the insulating substrate; an insulating layer formed on the insulating substrate, the insulating layer covering the touch signal transfer wiring and including a protrusion and an opening through which the touch signal transfer wiring is partially exposed; a connection conductor connected to the touch signal transfer wiring through the opening; an encapsulation substrate including a touch area corresponding to the display area and a peripheral area positioned around the touch area; a touch electrode layer positioned under the touch area of the encapsulation substrate; and a touch wiring connected to the touch electrode layer and positioned under the peripheral area of the encapsulation substrate.

    摘要翻译: 这里公开了一种有机发光二极管显示器,包括:绝缘基板,包括形成有多个像素的显示区域和位于显示区域周围的周边区域; 定位在所述绝缘基板上的周边区域中的触摸信号传输线; 绝缘层,形成在所述绝缘基板上,所述绝缘层覆盖所述触摸信号传输布线,并且包括突起和所述触摸信号传输布线部分露出的开口; 通过开口连接到触摸信号传输线的连接导体; 包括与所述显示区域对应的触摸区域和位于所述触摸区域周围的周边区域的封装基板; 位于所述封装基板的触摸区域下方的触摸电极层; 以及连接到触摸电极层并位于封装衬底的周边区域下方的触摸线。

    THIN FILM TRANSISTOR ARRAY PANEL
    3.
    发明申请

    公开(公告)号:US20190296153A1

    公开(公告)日:2019-09-26

    申请号:US16354396

    申请日:2019-03-15

    摘要: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.

    THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    薄膜晶体管基板及其制造方法

    公开(公告)号:US20140239290A1

    公开(公告)日:2014-08-28

    申请号:US14055933

    申请日:2013-10-17

    发明人: Hyeon Sik KIM

    IPC分类号: H01L29/786 H01L29/66

    摘要: The TFT substrate includes a gate electrode disposed on an insulating substrate; a gate insulating layer disposed on the gate electrode; a source/drain electrode disposed on the gate insulating layer; and an oxide semiconductor layer disposed between the gate insulating layer and the source/drain electrode. The oxide semiconductor layer includes a first portion that does not contact the source/drain electrode and in which a channel region is defined and a second portion in which a contact region that contacts the source/drain electrode is defined. The second portion includes a first oxide semiconductor layer and a second oxide semiconductor layer disposed on the first oxide semiconductor layer.

    摘要翻译: TFT基板包括设置在绝缘基板上的栅电极; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的源极/漏极; 以及设置在栅极绝缘层和源极/漏极之间的氧化物半导体层。 氧化物半导体层包括不接触源极/漏极并且其中限定沟道区的第一部分和限定了与源极/漏极接触的接触区域的第二部分。 第二部分包括设置在第一氧化物半导体层上的第一氧化物半导体层和第二氧化物半导体层。

    SCAN SIGNAL DRIVER AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20240242679A1

    公开(公告)日:2024-07-18

    申请号:US18466047

    申请日:2023-09-13

    IPC分类号: G09G3/3266 G09G3/32

    摘要: A design for a scan driver and a display device including the scan driver that is more resilient to electrostatic discharge. Thin film transistors within a stage are designed differently depending on whether or not a gate of the transistor is connected to an external source. Transistors whose gate is connected to an external source is specially designed to withstand electrostatic discharge applied to the gate thereof by one or more of increasing a number of channel areas, decreasing a length of an ohmic bridge, including a resistive element to the gate, decreasing a width of a channel areas, and increasing a width of the active layer.