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1.发明申请公开(公告)号：US20160218151A1
公开(公告)日：2016-07-28
申请号：US14879753
申请日：2015-10-09
发明人： Oh June KWON , Seung Yong SONG , Hyeon Sik KIM
CPC分类号： H01L27/323 , G06F1/16 , G06F3/0412 , G06F3/042 , G06F3/044 , G06F3/045 , G06F3/046 , G06F3/047 , G06F2203/04103 , H01L27/3276
摘要： Disclosed herein is an organic light emitting diode display, including: an insulating substrate including a display area in which a plurality of pixels are formed and a peripheral area positioned around the display area; a touch signal transfer wiring positioned in the peripheral area on the insulating substrate; an insulating layer formed on the insulating substrate, the insulating layer covering the touch signal transfer wiring and including a protrusion and an opening through which the touch signal transfer wiring is partially exposed; a connection conductor connected to the touch signal transfer wiring through the opening; an encapsulation substrate including a touch area corresponding to the display area and a peripheral area positioned around the touch area; a touch electrode layer positioned under the touch area of the encapsulation substrate; and a touch wiring connected to the touch electrode layer and positioned under the peripheral area of the encapsulation substrate.
摘要翻译： 这里公开了一种有机发光二极管显示器，包括：绝缘基板，包括形成有多个像素的显示区域和位于显示区域周围的周边区域; 定位在所述绝缘基板上的周边区域中的触摸信号传输线; 绝缘层，形成在所述绝缘基板上，所述绝缘层覆盖所述触摸信号传输布线，并且包括突起和所述触摸信号传输布线部分露出的开口; 通过开口连接到触摸信号传输线的连接导体; 包括与所述显示区域对应的触摸区域和位于所述触摸区域周围的周边区域的封装基板; 位于所述封装基板的触摸区域下方的触摸电极层; 以及连接到触摸电极层并位于封装衬底的周边区域下方的触摸线。
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公开(公告)号：US20210265579A1
公开(公告)日：2021-08-26
申请号：US17142818
申请日：2021-01-06
发明人： Wang Woo LEE , Sung Ho KIM , Hyeon Sik KIM , Joon Hyoung PARK , Seok Je SEONG , Jin Sung AN , Jin Seok OH , Min Woo WOO , Ji Seon LEE , Pil Suk LEE , Yun Sik JOO
摘要： A display device includes a supporting substrate including a polymeric material, base substrate disposed on an upper surface of the supporting substrate, a pixel array disposed in a display area of the base substrate, a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array, and an organic filling portion disposed under the transfer wiring in the bending area. The base substrate includes an organic film including a polymeric material, and an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film. The organic filling portion contacts the organic film of the base substrate.
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公开(公告)号：US20190296153A1
公开(公告)日：2019-09-26
申请号：US16354396
申请日：2019-03-15
发明人： Do Hyung KIM , Gun Hee KIM , Hyeon Sik KIM , Sang Ho PARK , Joo Hee JEON
IPC分类号： H01L29/786 , H01L29/417 , H01L29/08 , H01L27/32
摘要： A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.
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公开(公告)号：US20140239290A1
公开(公告)日：2014-08-28
申请号：US14055933
申请日：2013-10-17
发明人： Hyeon Sik KIM
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78618
摘要： The TFT substrate includes a gate electrode disposed on an insulating substrate; a gate insulating layer disposed on the gate electrode; a source/drain electrode disposed on the gate insulating layer; and an oxide semiconductor layer disposed between the gate insulating layer and the source/drain electrode. The oxide semiconductor layer includes a first portion that does not contact the source/drain electrode and in which a channel region is defined and a second portion in which a contact region that contacts the source/drain electrode is defined. The second portion includes a first oxide semiconductor layer and a second oxide semiconductor layer disposed on the first oxide semiconductor layer.
摘要翻译： TFT基板包括设置在绝缘基板上的栅电极; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的源极/漏极; 以及设置在栅极绝缘层和源极/漏极之间的氧化物半导体层。 氧化物半导体层包括不接触源极/漏极并且其中限定沟道区的第一部分和限定了与源极/漏极接触的接触区域的第二部分。 第二部分包括设置在第一氧化物半导体层上的第一氧化物半导体层和第二氧化物半导体层。
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公开(公告)号：US20240242679A1
公开(公告)日：2024-07-18
申请号：US18466047
申请日：2023-09-13
发明人： Jae Hyun PARK , Hyeon Sik KIM , Hye Seok NA
IPC分类号： G09G3/3266 , G09G3/32
CPC分类号： G09G3/3266 , G09G3/32 , G09G2310/0267 , G09G2330/06
摘要： A design for a scan driver and a display device including the scan driver that is more resilient to electrostatic discharge. Thin film transistors within a stage are designed differently depending on whether or not a gate of the transistor is connected to an external source. Transistors whose gate is connected to an external source is specially designed to withstand electrostatic discharge applied to the gate thereof by one or more of increasing a number of channel areas, decreasing a length of an ohmic bridge, including a resistive element to the gate, decreasing a width of a channel areas, and increasing a width of the active layer.
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公开(公告)号：US20220130667A1
公开(公告)日：2022-04-28
申请号：US17469279
申请日：2021-09-08
发明人： Mann Ho CHO , Kwang Sik JEONG , Hyeon Sik KIM , Hyun Eok SHIN , Byung Soo SO , Ju Hyun LEE
IPC分类号： H01L21/02
摘要： A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.
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公开(公告)号：US20200058723A1
公开(公告)日：2020-02-20
申请号：US16367589
申请日：2019-03-28
发明人： Wang Woo LEE , Moo Soon KO , Hyeon Sik KIM , Young Woo PARK , Se Wan SON , Jin Sung AN , Min Woo WOO , Seong Jun LEE , Jeong Soo LEE , Ji Seon LEE , Deuk Myung JI
IPC分类号： H01L27/32
摘要： A display device includes a substrate, a semiconductor layer on the substrate, a first insulating layer on the semiconductor layer, a first conductive layer on the semiconductor layer, a second insulating layer on the first conductive layer, a first contact hole penetrating the first insulating layer and the second insulating layer, a second conductive layer on the second insulating layer, connected to the semiconductor layer through the first contact hole, and including a hydrogen barrier material, and a third insulating layer on the second conductive layer.
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8.发明公开公开(公告)号：US20240071757A1
公开(公告)日：2024-02-29
申请号：US18502583
申请日：2023-11-06
发明人： Mann Ho CHO , Kwang Sik JEONG , Hyeon Sik KIM , Hyun Eok SHIN , Byung Soo SO , Ju Hyun LEE
IPC分类号： H01L21/02
CPC分类号： H01L21/02491 , H01L21/02422 , H01L21/02502 , H01L21/0254
摘要： A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.
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公开(公告)号：US20230380256A1
公开(公告)日：2023-11-23
申请号：US18363944
申请日：2023-08-02
发明人： Wang Woo LEE , Sung Ho KIM , Hyeon Sik KIM , Joon Hyoung PARK , Seok Je SEONG , Jin Sung AN , Jin Seok OH , Min Woo WOO , Ji Seon LEE , Pil Suk LEE , Yun Sik JOO
IPC分类号： H10K77/10 , H10K59/131 , H10K59/121 , H10K71/00 , H10K71/80
CPC分类号： H10K77/111 , H10K59/131 , H10K59/1213 , H10K71/00 , H10K71/80 , H01L27/1218
摘要： A display device includes a supporting substrate including a polymeric material, base substrate disposed on an upper surface of the supporting substrate, a pixel array disposed in a display area of the base substrate, a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array, and an organic filling portion disposed under the transfer wiring in the bending area. The base substrate includes an organic film including a polymeric material, and an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film. The organic filling portion contacts the organic film of the base substrate.
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公开(公告)号：US20230317007A1
公开(公告)日：2023-10-05
申请号：US18146228
申请日：2022-12-23
发明人： Hyeon Sik KIM , Gun Hee KIM , Tae Kyung AHN , Dae Young LEE , Sang Woo KIM
IPC分类号： G09G3/3233 , G09G3/3266 , G06V40/13 , G06F3/041 , H10K59/40 , H10K59/131
CPC分类号： G09G3/3233 , G09G3/3266 , G06V40/1318 , G06F3/0412 , H10K59/40 , H10K59/131 , G09G2330/021 , G09G2320/043 , G09G2354/00
摘要： A display device includes a pixel including a display driver configured to apply a driving current to a light-emitting element; and an optical sensor including a sensing driver configured to apply a sensing current to a read-out line based on a photocurrent from the photoelectric conversion element, wherein the pixel further includes, a driving transistor configured to control the driving current, a first transistor configured to apply a first initialization voltage to an anode of the light-emitting element based on an emission control signal, and a second transistor configured to connect the anode of the light-emitting element to a first electrode of the driving transistor in accordance with the emission control signal, and wherein a channel of the first transistor is a different material from channels of the driving transistor and the second transistor.
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