公开(公告)号：US08890171B2

公开(公告)日：2014-11-18

申请号：US13937563

申请日：2013-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun-sung Woo ,  Seon-mi Yoon ,  Hyeon-jin Shin ,  Dong-wook Lee ,  Jae-young Choi

IPC: H01L29/15 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L21/02527 ,  H01L21/02378 ,  H01L21/02612 ,  H01L21/02664 ,  H01L21/8213 ,  H01L29/1606 ,  H01L29/7781 ,  Y10S977/734

Abstract: A method of fabricating a single-layer graphene on a silicon carbide (SiC) wafer includes forming a plurality of graphene layers on the SiC wafer such that the plurality of graphene layers are on a buffer layer of the SiC wafer, the buffer layer being formed of carbon; removing the plurality of graphene layers from the buffer layer; and converting the buffer layer to a single-layer graphene.

Abstract translation: 在碳化硅（SiC）晶片上制造单层石墨烯的方法包括在SiC晶片上形成多个石墨烯层，使得多个石墨烯层位于SiC晶片的缓冲层上，形成缓冲层 的碳; 从缓冲层去除多个石墨烯层; 并将缓冲层转化为单层石墨烯。