公开(公告)号：US12131905B2

公开(公告)日：2024-10-29

申请号：US16923478

申请日：2020-07-08

申请人： Samsung Electronics Co., Ltd.

发明人： Keunwook Shin ,  Kyungeun Byun ,  Hyeonjin Shin ,  Soyoung Lee ,  Changseok Lee

IPC分类号： H01L21/02 ,  C23C16/26 ,  C23C16/50 ,  H01L29/16

CPC分类号： H01L21/02527 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/0262 ,  H01L29/1606

摘要： A graphene structure and a method of forming the graphene structure are provided. The graphene structure includes directly grown graphene that is directly grown on a surface of a substrate and has controlled surface energy.

公开(公告)号：US20240313056A1

公开(公告)日：2024-09-19

申请号：US18577827

申请日：2022-07-04

申请人： Paragraf Limited

发明人： Sebastian DIXON ,  Jaspreet KAINTH ,  Ivor GUINEY ,  Thomas James BADCOCK

IPC分类号： H01L29/16 ,  H01L21/02

CPC分类号： H01L29/1606 ,  H01L21/02376 ,  H01L21/02458 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/0262

摘要： There is provided a graphene substrate comprising: a graphene layer structure directly on a metal oxide layer, said metal oxide layer directly on a support layer; wherein the metal oxide layer has a thickness of less than 5 nm and is selected from the group consisting of Al2O3, HfO2, MgO, MgAl2O4, Ta2O5, Y2O3, ZrO2 and YSZ; and wherein the support layer is BN, AlN, GaN, SiC, diamond, or a combination thereof.

公开(公告)号：US12059251B2

公开(公告)日：2024-08-13

申请号：US16810183

申请日：2020-03-05

申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK

发明人： Qiao Lin ,  Yibo Zhu ,  Junyi Shang ,  Zhixing Zhang ,  Xuejun Wang ,  Jaeyoung Yang ,  Cheng Wang ,  Zhuang Hao

IPC分类号： A61B5/145 ,  A61B5/00 ,  A61B5/1477 ,  A61B5/1491 ,  G01N27/414 ,  G01N33/74 ,  H01L21/02 ,  H01L23/38 ,  H01L29/16 ,  H10K10/46 ,  H10K85/20

CPC分类号： A61B5/14532 ,  A61B5/14507 ,  A61B5/14539 ,  A61B5/14546 ,  A61B5/1477 ,  A61B5/1491 ,  A61B5/6821 ,  G01N27/4145 ,  G01N27/4146 ,  G01N33/74 ,  H01L21/02425 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02664 ,  H01L23/38 ,  H01L29/1606 ,  H10K10/484 ,  G01N2333/62 ,  H10K85/20

摘要： A microdevice for monitoring a target analyte is provided. The microdevice can include a field effect transistor comprising a substrate, a gate electrode, and a microfluidic channel including graphene. The microfluidic channel can be formed between drain electrodes and source electrodes on the substrate. The microdevice can also include at least one aptamer functionalized on a surface of the graphene. The at least one aptamer can be adapted for binding to the target analyte. Binding of the target analyte to the at least one aptamer can alter the conductance of the graphene.

公开(公告)号：US12051585B2

公开(公告)日：2024-07-30

申请号：US17432444

申请日：2019-02-28

申请人： TIANJIN UNIVERSITY

发明人： Lei Ma ,  Walter Alexander De Heer ,  Peixuan Ji ,  Kaimin Zhang ,  Jian Zhao ,  Mei Zhao

IPC分类号： C30B29/02 ,  B28D5/04 ,  C30B1/02 ,  H01L21/02

CPC分类号： H01L21/02013 ,  B28D5/045 ,  C30B1/026 ,  C30B29/02 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/0262

摘要： The present invention provides a control method to epitaxial growth monolayer graphene, in which a monolayer graphene is epitaxially grown on a non-polar crystal face at arbitrary angle of a non-polar crystal face SiC substrate, thereby utilizing the non-polar crystal face to manipulate the electrical transport properties of graphene. A monolayer graphene having ballistic transport properties can be epitaxially grown at arbitrary angle of non-polar crystal face SiC substrate by the above-mentioned control method.

公开(公告)号：US12027589B2

公开(公告)日：2024-07-02

申请号：US17087968

申请日：2020-11-03

申请人： Samsung Electronics Co., Ltd.

发明人： Keunwook Shin ,  Hyeonjin Shin ,  Yeonchoo Cho ,  Seunggeol Nam ,  Seongjun Park ,  Yunseong Lee

IPC分类号： H01L29/16 ,  C01B32/186 ,  H01L21/02

CPC分类号： H01L29/1606 ,  C01B32/186 ,  H01L21/02384 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/0262

摘要： Provided is a semiconductor device including graphene. The semiconductor device includes: a substrate including an insulator and a semiconductor; and a graphene layer configured to directly grow only on a surface of the semiconductor, wherein the semiconductor includes at least one of a group IV material and a group III-V compound.

公开(公告)号：US20240136180A1

公开(公告)日：2024-04-25

申请号：US18490878

申请日：2023-10-19

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Marko J. Tadjer ,  Joseph A. Spencer ,  Alan G. Jacobs ,  Hannah N. Masten ,  James Spencer Lundh ,  Karl D. Hobart ,  Travis J. Anderson ,  Tatyana I. Feygelson ,  Bradford B. Pate ,  Boris N. Feigelson

IPC分类号： H01L21/02 ,  H01L29/24 ,  H01L29/778 ,  H01L29/78 ,  H01L29/80

CPC分类号： H01L21/02565 ,  H01L21/02304 ,  H01L21/02527 ,  H01L21/0262 ,  H01L29/24 ,  H01L29/7787 ,  H01L29/785 ,  H01L29/802

摘要： A method for growing nanocrystalline diamond (NCD) on Ga2O3 to provide thermal management in Ga2O3-based devices. A protective SiNx interlayer is deposited on the Ga2O3 before growth of the NCD layer to protect the Ga2O3 from damage caused during growth of the NCD layer. The presence of the NCD provides thermal management and enables improved performance of the Ga2O3-based device.

公开(公告)号：US11961837B2

公开(公告)日：2024-04-16

申请号：US17571128

申请日：2022-01-07

申请人： The Board of Trustees of the Leland Stanford Junior University ,  The Regents of the University of California

发明人： Srabanti Chowdhury ,  Mohamadali Malakoutian ,  Matthew A. Laurent ,  Chenhao Ren ,  Siwei Li

IPC分类号： H01L27/085 ,  H01L21/02 ,  H01L21/8258 ,  H01L23/00 ,  H01L23/373 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L27/085 ,  H01L21/02389 ,  H01L21/02527 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/8258 ,  H01L23/3732 ,  H01L24/80 ,  H01L29/1602 ,  H01L29/2003 ,  H01L2224/80203 ,  H01L2924/13064 ,  H01L2924/13091

摘要： In certain examples, methods and semiconductor structures are directed to an integrated circuit (IC) having a diamond layer section and a GaN-based substrate being monolithically integrated or bonded as part of the same IC. In a specific example, the GaN-based substrate includes GaN, AlxGayN (0

公开(公告)号：US11915934B2

公开(公告)日：2024-02-27

申请号：US18167011

申请日：2023-02-09

申请人： AKHAN Semiconductor, Inc.

发明人： Adam Khan

IPC分类号： H01L21/00 ,  H01L21/04 ,  H01L21/768 ,  H01L29/16 ,  H01L29/66 ,  H01L29/868 ,  H01L21/02 ,  H01L21/285 ,  H01L21/324 ,  H01L29/36

CPC分类号： H01L21/043 ,  H01L21/02425 ,  H01L21/02527 ,  H01L21/042 ,  H01L21/0415 ,  H01L21/0435 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/324 ,  H01L21/76871 ,  H01L29/1602 ,  H01L29/36 ,  H01L29/6603 ,  H01L29/868

摘要： Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

公开(公告)号：US11901365B2

公开(公告)日：2024-02-13

申请号：US17308010

申请日：2021-05-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wang-Chun Huang ,  Kai-Chieh Yang ,  Ching-Wei Tsai ,  Kuan-Lun Cheng ,  Chih-Hao Wang

IPC分类号： H01L27/12 ,  H01L29/78 ,  H01L29/06 ,  H01L29/26 ,  H01L29/24 ,  H01L29/16 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/10 ,  H01L21/308

CPC分类号： H01L27/1211 ,  H01L21/02527 ,  H01L21/3086 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/785

摘要： A finFET device that includes a substrate and at least one semiconductor fin extending from the substrate. The fin may include a plurality of wide portions comprising a first semiconductor material and one or more narrow portions. The one or more narrow portions have a second width less than the first width of the wide portions. Each of the one or more narrow portions separates two of the plurality of wide portions from one another such that the plurality of wide portions and the one or more narrow portions are arranged alternatingly in a substantially vertical direction that is substantially perpendicular with a surface of the substrate. The fin may also include a channel layer covering sidewalls of the plurality of wide portions and a sidewall of the one or more narrow portions.

公开(公告)号：US20240014321A1

公开(公告)日：2024-01-11

申请号：US18366531

申请日：2023-08-07

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Yu Ma ,  Zheng-Yang Pan ,  Shih-Chieh Chang ,  Cheng-Han Lee

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/306 ,  H01L29/04 ,  H01L29/08 ,  H01L29/165 ,  H01L29/167

CPC分类号： H01L29/7848 ,  H01L29/66628 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/30604 ,  H01L29/04 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/167 ,  H01L29/66636

摘要： A dopant boost in the source/drain regions of a semiconductor device, such as a transistor can be provided. A semiconductor device can include a doped epitaxy of a first material having a plurality of boosting layers embedded within. The boosting layers can be of a second material different from the first material. Another device can include a source/drain feature of a transistor. The source/drain feature includes a doped source/drain material and one or more embedded distinct boosting layers. A method includes growing a boosting layer in a recess of a substrate, where the boosting layer is substantially free of dopant. The method also includes growing a layer of doped epitaxy in the recess on the boosting layer.