公开(公告)号：US20210344856A1

公开(公告)日：2021-11-04

申请号：US17370191

申请日：2021-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub SHIM

IPC: H04N5/353 ,  H04N5/341 ,  H04N5/355 ,  H04N5/357 ,  H04N5/3745

Abstract: An image sensor including: a pixel array including a plurality of pixels connected to a plurality of row lines and a plurality of column lines, each of the plurality of pixels including a photodiode for generating an electric charge in response to light, and a pixel circuit having a floating diffusion for storing the electric charge; and a controller configured to adjust a capacitance of the floating diffusion to a first value and obtain a first pixel signal from the pixel circuit during a first time period, adjust the capacitance of the floating diffusion to a second value greater than the first value and obtain a second pixel signal from the pixel circuit during a second time period subsequent to the first time period, and generate a result image using the first pixel signal and the second pixel signal.

公开(公告)号：US20240040276A1

公开(公告)日：2024-02-01

申请号：US18310750

申请日：2023-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Sub SHIM

IPC: H04N25/531 ,  H04N25/533 ,  H04N25/77

CPC classification number: H04N25/531 ,  H04N25/533 ,  H04N25/77

Abstract: Disclosed is an image sensor including a plurality of first pixels arranged in a first row and configured to generate first charges in response to a first exposure and a plurality of second pixels arranged in a second row different from the first row and configured to generate second charges in response to a second exposure. At least one pixel of the plurality of first pixels includes a photo diode, a first floating diffusion, a first transfer transistor, a gate electrode of the first transfer transistor partially overlapping the first floating diffusion area when viewed in a horizontal direction, a second floating diffusion area spaced apart from the first floating diffusion area, one end of the second floating diffusion area being connected to a gate of a drive transistor, and a second transfer transistor that electrically connects the first floating diffusion area to the second floating diffusion area.

公开(公告)号：US20190230302A1

公开(公告)日：2019-07-25

申请号：US16122215

申请日：2018-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung wook LIM ,  Sung Soo CHOI ,  Eun Sub SHIM ,  Jung Bin YUN ,  Sung-Ho CHOI

IPC: H04N5/359 ,  H01L27/146

Abstract: An image sensor includes a photoelectric converter to generate charges in response to incident light and to provide the generated charges to a first node, a transfer transistor to provide a voltage of the first node to a floating diffusion node based on a first control signal, a source follower transistor to provide a voltage of the floating diffusion node as a unit pixel output, a correlated double sampler (CDS) to receive the unit pixel output and to convert the unit pixel output into a digital code. The first control signal having first, second, and third voltages is maintained at the second voltage in a period between when the voltage of the first node is provided to the floating diffusion node and when the CDS is provided with the voltage of the first node as the unit pixel output.

公开(公告)号：US20180191974A1

公开(公告)日：2018-07-05

申请号：US15805368

申请日：2017-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub SHIM ,  Kyungho LEE

IPC: H04N5/355 ,  H04N5/243 ,  H04N5/345

CPC classification number: H04N5/35581 ,  H04N5/243 ,  H04N5/345 ,  H04N5/35563 ,  H04N5/3559 ,  H04N5/3575 ,  H04N5/37457 ,  H04N9/045

Abstract: An image sensor includes a pixel array including a plurality of unit pixels arranged along a plurality of rows and a plurality of columns. Each of the unit pixels includes a photoelectric conversion element generating and accumulating photocharges, a charge detection node receiving the photocharges accumulated in the photoelectric conversion element, a readout circuit converting the photocharges accumulated in and output from the charge detection node into an electrical pixel signal, the readout circuit outputting the electrical pixel signal, a capacitive element, and a switching element controlling connection between the charge detection node and the capacitive element. Each of the rows of the pixel array includes first pixels connected to a first conversion gain control line and second pixels connected to a second conversion gain control line.