公开(公告)号：US20230369357A1

公开(公告)日：2023-11-16

申请号：US18355427

申请日：2023-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub SHIM ,  Kyung Ho LEE ,  Sung Ho CHOI ,  Jung Hoon PARK ,  Jung Wook LIM ,  Min Ji JUNG

IPC: H01L27/146 ,  H04N25/70 ,  H04N25/778

CPC classification number: H01L27/14605 ,  H01L27/14627 ,  H01L27/14641 ,  H04N25/70 ,  H04N25/778

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US20220408038A1

公开(公告)日：2022-12-22

申请号：US17590327

申请日：2022-02-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuncheol KIM ,  Eun Sub SHIM

IPC: H04N5/355 ,  H04N5/369 ,  H04N5/3745

Abstract: An image sensing device includes a photoelectric element configured to generate an electric charge in response to light; first and second floating diffusions configured to store the electric charge; a transfer gate having a first end connected to the photoelectric element and a second end connected to the first floating diffusion; a reset transistor configured to reset voltages of the first and second floating diffusions based on a reset signal; a first dual conversion gain (DCG) transistor having a first end connected to the first floating diffusion and a second end connected to the second floating diffusion; first and second pixel circuits configured to generate first and second output voltages based on the first and second floating diffusions; and first and second analog to digital converters configured to receive the first and second output voltages and convert them to first and second digital signals.

公开(公告)号：US20240147063A1

公开(公告)日：2024-05-02

申请号：US18490250

申请日：2023-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Sub SHIM

IPC: H04N23/67 ,  H04N25/51 ,  H04N25/533 ,  H04N25/77 ,  H04N25/78

CPC classification number: H04N23/672 ,  H04N25/51 ,  H04N25/533 ,  H04N25/77 ,  H04N25/78

Abstract: An image sensor includes a first pixel group, a second pixel group arranged in a same column and row as the first pixel group, a first analog-to-digital converter and a second analog-to-digital converter corresponding to the first pixel group and the second pixel group, respectively and configured to process pixel signals output from the first pixel group and the second pixel group, and a switching circuit configured to selectively transmit a first pixel signal output from the first pixel group and a second pixel signal output from the second pixel group to the first analog-to-digital converter or the second analog-to-digital converter. While the first analog-to-digital converter is connected to the first pixel group to process the first pixel signal, the second analog-to-digital converter is connected to the second pixel group to process the second pixel signal. Accordingly, auto-focus information may be more effectively obtained.

公开(公告)号：US20210013250A1

公开(公告)日：2021-01-14

申请号：US17037819

申请日：2020-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub SHIM

IPC: H01L27/146

Abstract: An image sensor is provided comprising a substrate comprising first and second surfaces opposite to each other. A first isolation layer is disposed on the substrate and forms a boundary of a sensing region. A second isolation layer is disposed at least partially in the substrate within the sensing region and has a closed line shape. A photoelectric conversion device is disposed within the closed line shape of the second isolation layer, and a color filter is disposed on the first surface of the substrate.

公开(公告)号：US20200322559A1

公开(公告)日：2020-10-08

申请号：US16730420

申请日：2019-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub SHIM ,  Kyung Ho LEE

IPC: H04N5/378 ,  H01L27/146

Abstract: An image sensor is provided. The image sensor includes: a pixel array including a plurality of pixels arranged along rows and columns; and a row driver which drives the plurality of pixels for each of the rows, wherein each of the plurality of pixels includes a plurality of sub-pixels, each of the plurality of sub-pixels includes a plurality of photoelectric conversion elements sharing a floating diffusion area with each other, and a micro lens disposed to overlap the plurality of photoelectric conversion elements, a readout area is defined on the pixel array in accordance with a preset readout mode, and the row driver generates a drive signal for reading out signals provided from a photoelectric conversion element included in the readout area from among the plurality of photoelectric conversion elements, and provides the drive signal to the pixel array.

公开(公告)号：US20230154946A1

公开(公告)日：2023-05-18

申请号：US18155785

申请日：2023-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub SHIM ,  Kyung Ho LEE ,  Sung Ho CHOI ,  Jung Hoon PARK ,  Jung Wook LIM ,  Min Ji JUNG

IPC: H01L27/146 ,  H04N25/70 ,  H04N25/778

CPC classification number: H01L27/14605 ,  H01L27/14627 ,  H01L27/14641 ,  H04N25/70 ,  H04N25/778

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US20210152765A1

公开(公告)日：2021-05-20

申请号：US17139427

申请日：2020-12-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub SHIM ,  Kyungho LEE

IPC: H04N5/355 ,  H04N5/345 ,  H04N5/243 ,  H04N9/04 ,  H04N5/3745 ,  H04N5/357

Abstract: An image sensor includes a pixel array including a plurality of unit pixels arranged along a plurality of rows and a plurality of columns. Each of the unit pixels includes a photoelectric conversion element generating and accumulating photocharges, a charge detection node receiving the photocharges accumulated in the photoelectric conversion element, a readout circuit converting the photocharges accumulated in and output from the charge detection node into an electrical pixel signal, the readout circuit outputting the electrical pixel signal, a capacitive element, and a switching element controlling connection between the charge detection node and the capacitive element. Each of the rows of the pixel array includes first pixels connected to a first conversion gain control line and second pixels connected to a second conversion gain control line.

公开(公告)号：US20200236310A1

公开(公告)日：2020-07-23

申请号：US16838517

申请日：2020-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub SHIM ,  Kyungho LEE

IPC: H04N5/355 ,  H04N5/357 ,  H04N5/3745 ,  H04N9/04 ,  H04N5/243 ,  H04N5/345

Abstract: An image sensor includes a pixel array including a plurality of unit pixels arranged along a plurality of rows and a plurality of columns. Each of the unit pixels includes a photoelectric conversion element generating and accumulating photocharges, a charge detection node receiving the photocharges accumulated in the photoelectric conversion element, a readout circuit converting the photocharges accumulated in and output from the charge detection node into an electrical pixel signal, the readout circuit outputting the electrical pixel signal, a capacitive element, and a switching element controlling connection between the charge detection node and the capacitive element. Each of the rows of the pixel array includes first pixels connected to a first conversion gain control line and second pixels connected to a second conversion gain control line.

公开(公告)号：US20230154945A1

公开(公告)日：2023-05-18

申请号：US17845547

申请日：2022-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Taeyoung SONG ,  Eun Sub SHIM ,  Changhyun PARK

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14621 ,  H01L27/14612

Abstract: An image sensor is provided. The image sensor includes: a pixel array of pixels arranged in a row and column directions. A first pixel provided in a first row of the pixel array includes a first sub-pixel connected with a first metal line, a second sub-pixel connected with a second metal line, a third sub-pixel connected with a third metal line, and a fourth sub-pixel connected with a fourth metal line. When a read-out operation is performed on the first pixel, signals applied to the first through fourth metal lines are sequentially enabled. Based on the applied signals, at least a part of charges accumulated in the first through fourth sub-pixels is diffused to a first floating diffusion node. The first sub-pixel and the third sub-pixel are adjacent in the column direction, and the first sub-pixel and the second sub-pixel are adjacent in the row direction

公开(公告)号：US20220150434A1

公开(公告)日：2022-05-12

申请号：US17586892

申请日：2022-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Sub SHIM ,  Kyung Ho Lee

IPC: H04N5/378 ,  H01L27/146

Abstract: An image sensor is provided. The image sensor includes: a pixel array including a plurality of pixels arranged along rows and columns; and a row driver which drives the plurality of pixels for each of the rows, wherein each of the plurality of pixels includes a plurality of sub-pixels, each of the plurality of sub-pixels includes a plurality of photoelectric conversion elements sharing a floating diffusion area with each other, and a micro lens disposed to overlap the plurality of photoelectric conversion elements, a readout area is defined on the pixel array in accordance with a preset readout mode, and the row driver generates a drive signal for reading out signals provided from a photoelectric conversion element included in the readout area from among the plurality of photoelectric conversion elements, and provides the drive signal to the pixel array.