公开(公告)号：US20130292763A1

公开(公告)日：2013-11-07

申请号：US13865506

申请日：2013-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoon Chang ,  Jae-June Jang

IPC: H01L29/78

CPC classification number: H01L29/7816 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/66689 ,  H01L29/7835

Abstract: Semiconductor devices are provided including a substrate having a first conductivity type; a source region having a second conductivity type, different from the first conductivity type; a drain region, separate from the source region and having the second conductivity type; a body region having the first conductivity type and on the substrate surrounding side and bottom surfaces of the source region; a drift region having the second conductivity type, the drift region being on the substrate surrounding side and bottom surfaces of the drain region; a first gate on the body region; and an electrically floating second gate, separate from the first gate, on the drift region.

Abstract translation: 提供半导体器件，包括具有第一导电类型的衬底; 具有与第一导电类型不同的第二导电类型的源极区域; 漏极区，与源极区分离并具有第二导电类型; 具有第一导电类型的主体区域和围绕源区域的侧表面和底表面的基板; 具有第二导电类型的漂移区域，所述漂移区域位于围绕所述漏极区域的侧面和底表面的衬底上; 身体区域的第一个门; 以及在漂移区域上与第一栅极分离的电浮置第二栅极。