公开(公告)号：US20190123263A1

公开(公告)日：2019-04-25

申请号：US16108192

申请日：2018-08-22

Applicant: Samsung Electronics Co, Ltd.

Inventor： Yong-Sung PARK ,  Woo-Jin Kim ,  Jeong-Heon Park ,  Se-Chung Oh ,  Joon-Myoung Lee ,  Hyun Cho

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L27/22

Abstract: The methods of manufacturing an MRAM device and MRAM devices are provided. The methods may include forming a first electrode on an upper surface of a substrate, forming a first magnetic layer on the first electrode, forming a tunnel barrier structure on the first magnetic layer, forming a second magnetic layer on the tunnel barrier structure, and forming a second electrode on the second magnetic layer. The tunnel barrier structure may include a first tunnel barrier layer and a second tunnel barrier layer that are sequentially stacked on the first magnetic layer and may have different resistivity distributions from each other along a horizontal direction that may be parallel to the upper surface of the substrate.