-
公开(公告)号：US11706931B2
公开(公告)日：2023-07-18
申请号：US17230029
申请日：2021-04-14
发明人： Jae Hoon Kim , Sang Hwan Park , Yong-Sung Park , Hyeonwoo Seo , Se Chung Oh , Hyun Cho
CPC分类号： H10B61/22 , H10B63/34 , H10B63/845
摘要： A variable resistance memory device including a substrate; horizontal structures spaced apart from each other in a first direction perpendicular to a top surface of the substrate; variable resistance patterns on the horizontal structures, respectively; and conductive lines on the variable resistance patterns, respectively, wherein each of the horizontal structures includes a first electrode pattern, a semiconductor pattern, and a second electrode pattern arranged along a second direction parallel to the top surface of the substrate, and each of the variable resistance patterns is between one of the second electrode patterns and a corresponding one of the conductive lines.
-
公开(公告)号：US11944014B2
公开(公告)日：2024-03-26
申请号：US17358435
申请日：2021-06-25
发明人： Sanghwan Park , Jaehoon Kim , Yongsung Park , Hyeonwoo Seo , Sechung Oh , Hyun Cho
CPC分类号： H10N50/10 , G11C11/161 , H10B61/22 , H10N50/80 , H10N50/85
摘要： A magnetic memory device including a magnetic tunnel junction is provided. The magnetic tunnel junction includes a fixed layer, a polarization enhancement structure on the fixed layer, a tunnel barrier layer on the polarization enhancement structure, and a free layer on the tunnel barrier layer, wherein the polarization enhancement structure includes a plurality of polarization enhancement layers and at least one spacer layer which separates the plurality of polarization enhancement layers from each other. A thickness of each of the plurality of polarization enhancement layers is from 5 Å to about 20 Å, and a thickness of the at least one spacer layer is from about 2 Å to about 15 Å.
-
公开(公告)号：US11339467B2
公开(公告)日：2022-05-24
申请号：US16793096
申请日：2020-02-18
发明人： Ki Woong Kim , Hyeon Woo Seo , Hee Ju Shin , Se Chung Oh , Hyun Cho
摘要： A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.
-
4.发明申请公开(公告)号：US20190115527A1
公开(公告)日：2019-04-18
申请号：US16107242
申请日：2018-08-21
发明人： Jeong-Heon Park , Yong Sung Park , Joonmyoung Lee , Hyun Cho , Se Chung Oh
摘要： Provided are process control methods and process control systems. The method includes performing a deposition process on a lot defined by a group of a plurality of wafers, performing a measurement process on the lot to obtain a measured value with respect to at least one wafer among the plurality of wafers, producing a target value of a factor of a process condition in the deposition process by using a difference between the measured value and a reference value, and providing an input value of the factor with respect to a subsequent lot based on the target value. The operation of providing the input value of the factor includes obtaining a previous target value of the factor previously produced with respect to at least one previous lot, and providing a weighted average of the previous target value and the target value as the input value.
-
公开(公告)号：US10714678B2
公开(公告)日：2020-07-14
申请号：US16727986
申请日：2019-12-27
发明人： Yong-Sung Park , Woo-Jin Kim , Jeong-Heon Park , Se-Chung Oh , Joon-Myoung Lee , Hyun Cho
摘要： The methods of manufacturing an MRAM device and MRAM devices are provided. The methods may include forming a first electrode on an upper surface of a substrate, forming a first magnetic layer on the first electrode, forming a tunnel barrier structure on the first magnetic layer, forming a second magnetic layer on the tunnel barrier structure, and forming a second electrode on the second magnetic layer. The tunnel barrier structure may include a first tunnel barrier layer and a second tunnel barrier layer that are sequentially stacked on the first magnetic layer and may have different resistivity distributions from each other along a horizontal direction that may be parallel to the upper surface of the substrate.
-
公开(公告)号：US11725271B2
公开(公告)日：2023-08-15
申请号：US17721428
申请日：2022-04-15
发明人： Ki Woong Kim , Hyeon Woo Seo , Hee Ju Shin , Se Chung Oh , Hyun Cho
CPC分类号： C23C14/3464 , C23C14/08 , C23C14/352 , H01J37/32082 , H01J37/32155 , H01J37/32715 , H01J37/3417
摘要： A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.
-
7.发明授权公开(公告)号：US10910552B2
公开(公告)日：2021-02-02
申请号：US16352957
申请日：2019-03-14
发明人： Joonmyoung Lee , Yong Sung Park , Jeong-Heon Park , Hyun Cho , Ung Hwan Pi
IPC分类号： H01L43/02 , H01L43/10 , H01L21/67 , G11C14/00 , H01L43/12 , H01L27/108 , H01L27/22 , H01L27/11 , G11C11/16
摘要： A magnetic memory device, a method for manufacturing a magnetic memory device, and a substrate treating apparatus, the device including a substrate including a first memory region and a second memory region; a first magnetic tunnel junction pattern on the first memory region, the first magnetic tunnel junction pattern including a first free pattern and a first oxide pattern on the first free pattern; and a second magnetic tunnel junction pattern on the second memory region, the second magnetic tunnel junction pattern including a second free pattern and a second oxide pattern on the second free pattern, wherein a ratio of a thickness of the first oxide pattern to a thickness of the first free pattern is different from a ratio of a thickness of the second oxide pattern to a thickness of the second free pattern.
-
公开(公告)号：US20210010127A1
公开(公告)日：2021-01-14
申请号：US16793096
申请日：2020-02-18
发明人： Ki Woong Kim , Hyeon Woo Seo , Hee Ju Shin , Se Chung Oh , Hyun Cho
摘要： A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.
-
公开(公告)号：US20190123263A1
公开(公告)日：2019-04-25
申请号：US16108192
申请日：2018-08-22
发明人： Yong-Sung PARK , Woo-Jin Kim , Jeong-Heon Park , Se-Chung Oh , Joon-Myoung Lee , Hyun Cho
摘要： The methods of manufacturing an MRAM device and MRAM devices are provided. The methods may include forming a first electrode on an upper surface of a substrate, forming a first magnetic layer on the first electrode, forming a tunnel barrier structure on the first magnetic layer, forming a second magnetic layer on the tunnel barrier structure, and forming a second electrode on the second magnetic layer. The tunnel barrier structure may include a first tunnel barrier layer and a second tunnel barrier layer that are sequentially stacked on the first magnetic layer and may have different resistivity distributions from each other along a horizontal direction that may be parallel to the upper surface of the substrate.
-
公开(公告)号：US20220158085A1
公开(公告)日：2022-05-19
申请号：US17358435
申请日：2021-06-25
发明人： Sanghwan Park , Jaehoon Kim , Yongsung Park , Hyeonwoo Seo , Sechung Oh , Hyun Cho
摘要： A magnetic memory device including a magnetic tunnel junction is provided. The magnetic tunnel junction includes a fixed layer, a polarization enhancement structure on the fixed layer, a tunnel barrier layer on the polarization enhancement structure, and a free layer on the tunnel barrier layer, wherein the polarization enhancement structure includes a plurality of polarization enhancement layers and at least one spacer layer which separates the plurality of polarization enhancement layers from each other. A thickness of each of the plurality of polarization enhancement layers is from 5 Å to about 20 Å, and a thickness of the at least one spacer layer is from about 2 Å to about 15 Å.
-
-
-
-
-
-
-
-
-
搜索结果
11 条记录 (耗时 0.017 秒)
