公开(公告)号：US10483274B2

公开(公告)日：2019-11-19

申请号：US16136438

申请日：2018-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Da Woon Jeong ,  Jihye Kim ,  Joowon Park

IPC: H01L27/11565 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11575

Abstract: A three-dimensional semiconductor device includes an electrode structure on a substrate that includes a first region and a second region, the electrode structure including a ground selection electrode, cell electrodes, and a string selection electrode which are sequentially stacked on the substrate wherein the ground selection electrode, the cell electrodes, and the string selection electrode respectively include a ground selection pad, cell pads, and a string selection pad which define a stepped structure in the second region of the substrate, a plurality of dummy pillars penetrating each of the cell pads and a portion of the electrode structure under each of the cell pads, and a cell contact plug electrically connected to each of the cell pads, wherein each of the dummy pillars penetrates a boundary between adjacent cell pads, and wherein the adjacent cell pads share the dummy pillars.

公开(公告)号：US10083977B2

公开(公告)日：2018-09-25

申请号：US15684098

申请日：2017-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Da Woon Jeong ,  Jihye Kim ,  Joowon Park

IPC: H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582

CPC classification number: H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582

Abstract: A three-dimensional semiconductor device includes an electrode structure on a substrate that includes a first region and a second region, the electrode structure including a ground selection electrode, cell electrodes, and a string selection electrode which are sequentially stacked on the substrate wherein the ground selection electrode, the cell electrodes, and the string selection electrode respectively include a ground selection pad, cell pads, and a string selection pad which define a stepped structure in the second region of the substrate, a plurality of dummy pillars penetrating each of the cell pads and a portion of the electrode structure under each of the cell pads, and a cell contact plug electrically connected to each of the cell pads, wherein each of the dummy pillars penetrates a boundary between adjacent cell pads, and wherein the adjacent cell pads share the dummy pillars.

公开(公告)号：US09748258B2

公开(公告)日：2017-08-29

申请号：US15054428

申请日：2016-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Da Woon Jeong ,  Jihye Kim ,  Joowon Park

IPC: H01L27/115 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582

CPC classification number: H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582

Abstract: A three-dimensional semiconductor device includes an electrode structure on a substrate that includes a first region and a second region, the electrode structure including a ground selection electrode, cell electrodes, and a string selection electrode which are sequentially stacked on the substrate wherein the ground selection electrode, the cell electrodes, and the string selection electrode respectively include a ground selection pad, cell pads, and a string selection pad which define a stepped structure in the second region of the substrate, a plurality of dummy pillars penetrating each of the cell pads and a portion of the electrode structure under each of the cell pads, and a cell contact plug electrically connected to each of the cell pads, wherein each of the dummy pillars penetrates a boundary between adjacent cell pads, and wherein the adjacent cell pads share the dummy pillars.