公开(公告)号：US11569389B2

公开(公告)日：2023-01-31

申请号：US17470341

申请日：2021-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon Seung Yang ,  Eun Hye Choi ,  Seung Mo Kang ,  Yong Seung Kim ,  Jung Taek Kim ,  Min-Hee Choi

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device includes a fin-type pattern on a substrate, the fin-type pattern extending in a first direction and protruding from the substrate in a third direction, a first wire pattern on the fin-type pattern, the first wire pattern being spaced apart from the fin-type pattern in the third direction, and a gate electrode extending in a second direction, which is perpendicular to the first and third directions, and surrounding the first wire pattern, the gate electrode including a first portion that overlaps with the fin-type pattern in the second direction and a second portion corresponding to a remainder of the gate electrode except for the first portion.