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    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    13.
    发明申请
    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
    图像传感器和电子设备，包括它们

    公开(公告)号：US20150200226A1

    公开(公告)日：2015-07-16

    申请号：US14560920

    申请日：2014-12-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yong Wan JIN ,  Kyu Sik KIM ,  Kyung Bae PARK ,  Kwang Hee LEE ,  Dong-Seok LEEM ,  Deukseok CHUNG

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636

    Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.

    Abstract translation: 图像传感器包括集成有至少一个第一光感测装置的半导体衬底，该第一光感测装置被配置为感测蓝色波长区域中的光，以及至少一个第二光感测装置，被配置为感测红色波长区域中的光，滤色器层 半导体衬底并且包括被配置为选择性地吸收蓝色波长区域中的光的蓝色滤色器和被配置为选择性地吸收红色波长区域中的光的红色滤色器以及滤色器层上的第三感光装置，并且包括 一对电极彼此面对，以及一对电极之间的光活性层，并且被配置为选择性地吸收绿色波长区域中的光。

    PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    14.
    发明申请
    PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 有权
    光电器件和图像传感器

    公开(公告)号：US20140239271A1

    公开(公告)日：2014-08-28

    申请号：US14044315

    申请日：2013-10-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Seok LEEM ,  Kyu Sik KIM ,  Kyung Bae PARK ,  Kwang Hee LEE ,  Seon-Jeong LIM

    IPC: H01L31/0232 ,  H01L51/44

    CPC classification number: H01L51/442 ,  H01L27/307 ,  H01L51/4253 ,  H01L51/4273 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

    Abstract: A photoelectronic device includes a first electrode, a second electrode facing the first electrode, an active layer between the first electrode and the second electrode, and an auxiliary layer between the first electrode and the active layer, the auxiliary layer including a first auxiliary layer including a metal oxide and a metal and a second auxiliary layer including a first organic material having a HOMO energy level of greater than or equal to about 6.0 eV.

    Abstract translation: 光电子器件包括第一电极，面对第一电极的第二电极，第一电极和第二电极之间的有源层，以及在第一电极和有源层之间的辅助层，辅助层包括第一辅助层，包括 金属氧化物和金属，以及包括HOMO能级大于或等于约6.0eV的第一有机材料的第二辅助层。

    ORGANIC LIGHT EMITTING DIODE PANELS AND DISPLAY DEVICES INCLUDING THE SAME
    17.
    发明申请
    ORGANIC LIGHT EMITTING DIODE PANELS AND DISPLAY DEVICES INCLUDING THE SAME 审中-公开

    公开(公告)号：US20200083302A1

    公开(公告)日：2020-03-12

    申请号：US16225747

    申请日：2018-12-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae PARK ,  Kwang Hee LEE ,  Chul Joon HEO

    IPC: H01L27/32 ,  H01L51/52

    Abstract: An OLED panel for implementing biometric recognition influencing an aperture ratio of an OLED light emitter i includes a substrate, an OLED on the substrate, and a driver on the substrate. The OLED may emit visible light, and the driver may drive the OLED. The driver may include a visible light sensor configured to detect the visible light emitted by the OLED, and the visible light sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate. The OLED panel may include a near infrared ray OLED that is configured to emit near infrared rays, and the driver may include a near infrared ray sensor configured to detect near infrared rays emitted by the near infrared ray OLED. The near infrared ray sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate.

    IMAGE SENSORS AND ELECTRONIC DEVICES
    18.
    发明申请
    IMAGE SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：US20190245008A1

    公开(公告)日：2019-08-08

    申请号：US16167655

    申请日：2018-10-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Dong-Seok LEEM ,  Kwang Hee LEE ,  Sung Young YUN ,  Yong Wan JIN

    IPC: H01L27/30 ,  G02B5/20 ,  H01L51/44

    CPC classification number: H01L27/307 ,  H01L27/14621 ,  H01L27/14649 ,  H01L27/14667 ,  H01L51/0046

    Abstract: An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.

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