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    ORGANIC IMAGE SENSORS WITHOUT COLOR FILTERS
    1.
    发明申请
    ORGANIC IMAGE SENSORS WITHOUT COLOR FILTERS 有权

    公开(公告)号：US20210366991A1

    公开(公告)日：2021-11-25

    申请号：US17392996

    申请日：2021-08-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Kwang Hee LEE ,  Sung Young YUN ,  Dong-Seok LEEM ,  Yong Wan JIN

    IPC: H01L27/30 ,  H01L27/28

    Abstract: An organic image sensor may be configured to obtain a color signal associated with a particular wavelength spectrum of light absorbed by the organic image sensor may omit a color filter. The organic image sensor may include an organic photoelectric conversion layer including a first material and a second material. The first material may absorb a first wavelength spectrum of light, and the second material may absorb a second wavelength spectrum of light. The organic photoelectric conversion layer may include stacked upper and lower layers, and the respective material compositions of the lower and upper layers may be first and second mixtures of the first and second materials. A ratio of the first material to the second material in the first mixture may be greater than 1/1, and a ratio of the first material to the second material in the second mixture may be less than 1/1.

    PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    5.
    发明申请
    PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 审中-公开
    光电器件和图像传感器

    公开(公告)号：US20140239278A1

    公开(公告)日：2014-08-28

    申请号：US14186075

    申请日：2014-02-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae PARK ,  Kyu Sik KIM ,  Kwang Hee LEE ,  Dong-Seok LEEM ,  Seon-Jeong LIM

    IPC: H01L51/44 ,  H01L27/30

    Abstract: Disclosed are a photoelectronic device including a first electrode including a first metal; an active layer disposed between the first electrode and a second electrode; and a diffusion barrier layer disposed between the first electrode and the active layer; the diffusion barrier layer including a second metal, wherein the second metal has a thermal diffusivity that is lower than a thermal diffusivity of the first metal, and wherein the first electrode and the diffusion barrier layer are configured to transmit light, and an image sensor including the photoelectronic device.

    Abstract translation: 公开了一种光电子器件，其包括：第一电极，其包括第一金属; 设置在所述第一电极和第二电极之间的有源层; 以及设置在所述第一电极和所述有源层之间的扩散阻挡层; 所述扩散阻挡层包括第二金属，其中所述第二金属具有低于所述第一金属的热扩散率的热扩散率，并且其中所述第一电极和所述扩散阻挡层被配置为透射光;以及图像传感器，包括 光电子器件。

    ORGANIC IMAGE SENSORS WITHOUT COLOR FILTERS
    7.
    发明申请
    ORGANIC IMAGE SENSORS WITHOUT COLOR FILTERS 审中-公开

    公开(公告)号：US20190245009A1

    公开(公告)日：2019-08-08

    申请号：US16265264

    申请日：2019-02-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Kwang Hee LEE ,  Sung Young YUN ,  Dong-Seok LEEM ,  Yong Wan JIN

    IPC: H01L27/30 ,  H01L27/28

    CPC classification number: H01L27/307 ,  H01L27/281 ,  H01L27/286

    Abstract: An organic image sensor may be configured to obtain a color signal associated with a particular wavelength spectrum of light absorbed by the organic image sensor may omit a color filter. The organic image sensor may include an organic photoelectric conversion layer including a first material and a second material. The first material may absorb a first wavelength spectrum of light, and the second material may absorb a second wavelength spectrum of light. The organic photoelectric conversion layer may include stacked upper and lower layers, and the respective material compositions of the lower and upper layers may be first and second mixtures of the first and second materials. A ratio of the first material to the second material in the first mixture may be greater than 1/1, and a ratio of the first material to the second material in the second mixture may be less than 1/1.

    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    9.
    发明申请
    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20170287971A1

    公开(公告)日：2017-10-05

    申请号：US15283698

    申请日：2016-10-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Kwang Hee LEE ,  Kyu Sik Kim ,  Sung Young YUN ,  Dong-Seok LEEM ,  Yong Wan JIN

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14636

    Abstract: An image sensor includes a semiconductor substrate and a photoelectric conversion device on the semiconductor substrate and including a plurality of pixel electrodes, a light absorption layer, and a common electrode. The plurality of pixel electrodes may include a first pixel electrode and a second pixel electrode. The photoelectric conversion device may include a first photoelectric conversion region defined in an overlapping region with the first pixel electrode, the light absorption layer, and the common electrode, and a second photoelectric conversion region defined in an overlapping region with the second pixel electrode, the light absorption layer, and the common electrode. Sensitivity of the first photoelectric conversion region may be higher than sensitivity of the second photoelectric conversion region. An electronic device may include the image sensor.

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