公开(公告)号：US11581347B2

公开(公告)日：2023-02-14

申请号：US16775937

申请日：2020-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongki Kim ,  Donghyun Kim ,  Minkwan Kim ,  Minkyung Kim ,  Minho Jang ,  In Sung Joe

IPC: H01L27/146

Abstract: An image sensor and a method of manufacturing thereof are provided. The image sensor includes a substrate, a grid structure, and color filters. The substrate includes a pixel separation structure defining pixel regions, and a sub-pixel regions for each pixel region. The grid structure is disposed on the substrate and includes first fence segments provided between the sub-pixel regions, and second fence segments provided between neighboring pixel regions. The grid structure defines openings corresponding respectively to the sub-pixel regions. The color filters are disposed in the openings defined by the grid structure. Each of the color filters has a flat top surface and the flat top surface of each color filter is parallel to a bottom surface thereof.

公开(公告)号：US12294797B2

公开(公告)日：2025-05-06

申请号：US18336495

申请日：2023-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongki Kim ,  Minkyung Kim ,  Minkwan Kim ,  Minho Jang ,  Insung Joe

IPC: H04N25/704 ,  H01L27/146 ,  H04N25/11

Abstract: An image sensor is presented which includes a pixel array including a plurality of image sensing pixels in a substrate, a phase detection shared pixel in the substrate, the phase detection shared pixel including two phase detection subpixels arranged next to each other, a color filter fence disposed on the plurality of image sensing pixels, and the phase detection shared pixel, the color filter fence defining a plurality of color filter spaces, a plurality of color filter layers respectively disposed in the plurality of color filter spaces on the plurality of image sensing pixels, and the phase detection shared pixel, a first micro-lens disposed on each of the plurality of image sensing pixels to have a first height, and a second micro-lens disposed to vertically overlap the two phase detection subpixels of the phase detection shared pixel and to have a second height greater than the first height.

公开(公告)号：US11910112B2

公开(公告)日：2024-02-20

申请号：US17812795

申请日：2022-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongki Kim ,  Minkyung Kim ,  Minkwan Kim ,  Minho Jang ,  Insung Joe

IPC: H04N25/704 ,  H01L27/146 ,  H04N25/11

CPC classification number: H04N25/704 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14685 ,  H04N25/11

Abstract: An image sensor is presented which includes a pixel array including a plurality of image sensing pixels in a substrate, a phase detection shared pixel in the substrate, the phase detection shared pixel including two phase detection subpixels arranged next to each other, a color filter fence disposed on the plurality of image sensing pixels, and the phase detection shared pixel, the color filter fence defining a plurality of color filter spaces, a plurality of color filter layers respectively disposed in the plurality of color filter spaces on the plurality of image sensing pixels, and the phase detection shared pixel, a first micro-lens disposed on each of the plurality of image sensing pixels to have a first height, and a second micro-lens disposed to vertically overlap the two phase detection subpixels of the phase detection shared pixel and to have a second height greater than the first height.

公开(公告)号：US11515348B2

公开(公告)日：2022-11-29

申请号：US16900076

申请日：2020-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minho Jang ,  Jeongsoon Kang ,  Taehyoung Kim ,  Masaru Ishii ,  In Sung Joe

IPC: H01L27/146

Abstract: An image sensor includes a substrate having a first surface, a charge storage portion disposed in the substrate, a light-blocking pattern disposed on the first surface overlapping the charge storage portion, and a low-refractive index pattern on the light-blocking pattern.

公开(公告)号：US20210351220A1

公开(公告)日：2021-11-11

申请号：US17134699

申请日：2020-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minho Jang ,  Doowon Kwon ,  Dongchan Kim ,  Bokwon Kim ,  Kyungrae Byun ,  Jungchak Ahn ,  Hyunyoung Yeo

IPC: H01L27/146

Abstract: An image sensor chip includes a lower chip, an upper chip stacked on the lower chip and including a photoelectric element, a via hole penetrating through the upper chip and penetrating through at least a portion of the lower chip, and a conductive connection layer electrically connecting the lower chip and the upper chip to each other in the via hole. The upper chip includes an upper substrate, an upper isolation layer and an upper element on the upper substrate, a connection contact plug, and a multilayer interconnection line electrically connected to the connection contact plug. A distance between an upper surface of the connection contact plug and an upper surface of the upper isolation layer is greater than a distance between an upper surface of an upper gate electrode of the upper element and an upper surface of the upper isolation layer.

公开(公告)号：US20210120198A1

公开(公告)日：2021-04-22

申请号：US16986759

申请日：2020-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongki Kim ,  Minkyung Kim ,  Minkwan Kim ,  Minho Jang ,  Insung Insung

IPC: H04N5/369 ,  H04N9/04 ,  H01L27/146

Abstract: An image sensor is presented which includes a pixel array including a plurality of image sensing pixels in a substrate, a phase detection shared pixel in the substrate, the phase detection shared pixel including two phase detection subpixels arranged next to each other, a color filter fence disposed on the plurality of image sensing pixels, and the phase detection shared pixel, the color filter fence defining a plurality of color filter spaces, a plurality of color filter layers respectively disposed in the plurality of color filter spaces on the plurality of image sensing pixels, and the phase detection shared pixel, a first micro-lens disposed on each of the plurality of image sensing pixels to have a first height, and a second micro-lens disposed to vertically overlap the two phase detection subpixels of the phase detection shared pixel and to have a second height greater than the first height.