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公开(公告)号:US20220064182A1
公开(公告)日:2022-03-03
申请号:US17407646
申请日:2021-08-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ohkyu KWON , Rae Sung KIM , Dong-Seok LEEM , Changki KIM , Insun PARK
IPC: C07D495/14 , C07D495/04 , C07D409/04 , C07D409/14
Abstract: A compound is represented by Chemical Formula 1. The compound may be included in, a film, an infrared sensor, a combination sensor, and/or an electronic device. In Chemical Formula 1, X, Y1, Y2, Z1, Z2, Q, R1, and R2 are the same as described in the detailed description.
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12.
公开(公告)号:US20200287191A1
公开(公告)日:2020-09-10
申请号:US16807479
申请日:2020-03-03
Applicant: SAMSUNG SDI CO., LTD. , SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jungsue JANG , Minho CHO , Hana KIM , Myungkook PARK , Seung Rim YANG , Byungmin LEE , Bokyung JUNG , Rae Sung KIM
IPC: H01M2/16 , H01M10/052
Abstract: A separator for a rechargeable lithium battery and a rechargeable lithium battery, the separator including a porous substrate; and a coating layer on at least one surface of the porous substrate, wherein the coating layer includes a binder and inorganic particles, the binder including a polyurethane and a polyvinyl alcohol, and the polyurethane and the polyvinyl alcohol are included in a weight ratio of about 5:5 to about 9:1.
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13.
公开(公告)号:US20190051879A1
公开(公告)日:2019-02-14
申请号:US16100099
申请日:2018-08-09
Applicant: SAMSUNG SDI CO., LTD. , SAMSUNG ELECTRONICS CO., LTD.
Inventor: Byungmin LEE , Hana KIM , Jungsue JANG , Myungkook PARK , Seung Rim YANG , Bokyung JUNG , Minho CHO , Rae Sung KIM , Namhee LEE
IPC: H01M2/16 , H01M10/0525
Abstract: A separator for a rechargeable battery, and a rechargeable lithium battery including the same are provided. The separator includes a porous substrate, and a heat resistance layer on at least one surface of the porous substrate. The heat resistance layer may include an acryl-based copolymer, a polyvinyl alcohol-based polymer, and a sheet-shaped inorganic particle, where the sheet-shaped inorganic particle is selected from mica, clay, magnesium hydroxide (Mg(OH)2), aluminum hydroxide (Al(OH)3), talc, and a combination thereof, and a particle diameter of the sheet-shaped inorganic particle is about 0.1 μm to about 10 μm.
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14.
公开(公告)号:US20240237529A1
公开(公告)日:2024-07-11
申请号:US18515647
申请日:2023-11-21
Applicant: Samsung Electronics Co., Ltd. , Sogang University Research & Business Development Foundation
Inventor: Sangdong KIM , Ohkyu KWON , Rae Sung KIM , Sang Ho PARK , Insun PARK , Duck-hyung LEE , Dong-Seok LEEM , Chan-ju JEONG , Eun-gyeong CHOI , Mi-hyeon CHOO
CPC classification number: H10K85/6576 , C07C25/22 , C07D339/06 , H10K85/615 , H10K85/623 , H10K85/624 , C07C2603/52 , C07C2603/54 , H10K30/30 , H10K30/40 , H10K39/32
Abstract: Provided are a compound represented by Chemical Formula 1, a photoelectric device, an image sensor, and an electronic device including the same.
In Chemical Formula 1, the definition of each substituent is as described in the specification.-
公开(公告)号:US20230120456A1
公开(公告)日:2023-04-20
申请号:US17831923
申请日:2022-06-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Insun PARK , Changki KIM , Rae Sung KIM , Dong-Seok LEEM , Ohkyu KWON
IPC: H01L51/42 , H01L27/30 , H01L51/00 , H01L51/44 , H01L27/146
Abstract: An infrared absorption composition includes a p-type semiconductor compound including a first structural unit represented by Chemical Formula 1 and a second structural unit including an electron donating moiety; and an n-type semiconductor compound represented by Chemical Formula 2: wherein, in Chemical Formula 1, Ar1, X, R1a, and R2a are the same as defined in the detailed description. In Chemical Formula 2, A1, A2, D1, D2, and D3 are the same as defined in the detailed description.
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公开(公告)号:US20220013585A1
公开(公告)日:2022-01-13
申请号:US17485737
申请日:2021-09-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dong-Seok LEEM , Rae Sung KIM , Hyesung CHOI , Ohkyu KWON , Changki KIM , Hwang Suk KIM , Bum Woo PARK , Jae Jun LEE
IPC: H01L27/30 , H01L27/146 , H01L51/42 , H01L51/50
Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.
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公开(公告)号:US20210380607A1
公开(公告)日:2021-12-09
申请号:US17334106
申请日:2021-05-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ohkyu KWON , Hwang Suk KIM , Dong-Seok LEEM , Rae Sung KIM , Hyesung CHOI
IPC: C07D519/00 , G02B5/22 , G02B5/20 , H01L51/44
Abstract: An infrared absorber includes a compound represented by Chemical Formula In Chemical Formula 1, Ar1, Ar2, X1, L1, L2, R1, R2, R3, and R4 are the same as defined in the detailed description.
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公开(公告)号:US20210340312A1
公开(公告)日:2021-11-04
申请号:US17242724
申请日:2021-04-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jae Jun LEE , Ohkyu KWON , Rae Sung KIM , Hwang Suk KIM , In Sun PARK , Dong-Seok LEEM
Abstract: Disclosed are an infrared absorbing polymer including a first structural unit represented by Chemical Formula 1 and a second structural unit including at least one of Chemical Formula 2A to Chemical Formula 2I, an infrared absorbing/blocking film, a photoelectric device, a sensor, and an electronic device.
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公开(公告)号:US20210036061A1
公开(公告)日:2021-02-04
申请号:US16788857
申请日:2020-02-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dong-Seok LEEM , Rae Sung KIM , Hyesung CHOI , Ohkyu KWON , Changki KIM , Hwang Suk KIM , Bum Woo PARK , Jae Jun LEE
Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.
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