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公开(公告)号：US20230125778A1
公开(公告)日：2023-04-27
申请号：US17939216
申请日：2022-09-07
发明人： Ohkyu KWON , Rae Sung KIM , Dong-Seok LEEM , Sangdong KIM , Insun PARK
IPC分类号： C07D409/14 , C07D409/04 , H01L51/42 , H01L51/00 , H01L51/50 , H01L33/50
摘要： Disclosed are a compound represented by Chemical Formula 1, and a film, an infrared sensor, and an electronic device including the compound. In Chemical Formula 1, Q1, Q2, X1, X2, R1, R2, and A1 are the same as in the specification.
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公开(公告)号：US20220059772A1
公开(公告)日：2022-02-24
申请号：US17363543
申请日：2021-06-30
发明人： Ohkyu KWON , Changki KIM , Hyesung CHOI , Hwang Suk KIM , Insun PARK , Dong-Seok LEEM
IPC分类号： H01L51/00 , C07D409/14 , C07D517/04 , C07D495/14
摘要： A compound is represented by Chemical Formula 1. In Chemical Formula 1, R1 to R4, R11a to R14c, and n are the same as defined in the detailed description.
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公开(公告)号：US20230015790A1
公开(公告)日：2023-01-19
申请号：US17716251
申请日：2022-04-08
发明人： Dong-Seok LEEM , Ohkyu KWON , Rae Sung KIM , Insun PARK
IPC分类号： H01L51/42 , H01L27/146 , H01L31/109 , H01L31/0232 , H01L31/0224 , H01L51/44
摘要： An infrared photodiode includes a first electrode including a reflective layer, a second electrode facing the first electrode, and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes an infrared absorbing material. A maximum absorption wavelength of the infrared absorbing material in a solution state is greater than about 700 nm and less than or equal to about 950 nm. The infrared photodiode is configured to exhibit an external quantum efficiency (EQE) spectrum in a wavelength region of greater than or equal to about 1000 nm.
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公开(公告)号：US20210367166A1
公开(公告)日：2021-11-25
申请号：US17323294
申请日：2021-05-18
发明人： Insun PARK , Rae Sung KIM , Dong-Seok LEEM
IPC分类号： H01L51/00
摘要： Disclosed are an infrared absorption composition, and a photoelectric device, an organic sensor, and an electronic device including the same. The infrared absorption composition includes a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound. The n-type semiconductor compound includes a compound represented by Chemical Formula 2A, a compound represented by Chemical Formula 2B, a compound represented by Chemical Formula 2C, a fullerene derivative, or a combination thereof. The p-type semiconductor compound and the n-type semiconductor compound provide a bulk heterojunction (BHJ) structure.
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公开(公告)号：US20200259209A1
公开(公告)日：2020-08-13
申请号：US16787126
申请日：2020-02-11
发明人： Insun PARK , Myongchun KOH , Dongyoung KIM , Yoonsok KANG , Jinah SEO
IPC分类号： H01M10/0525 , H01M10/0567 , H01M10/0569
摘要： An electrolyte includes: a lithium salt; a non-aqueous solvent; and an unsaturated compound represented by Formula 2: wherein definitions of x, y, z, M, A, Q1, and Q2 in Formula 1 and Formula 2 are the same as those described in the description.
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6.发明申请公开(公告)号：US20200251780A1
公开(公告)日：2020-08-06
申请号：US16778003
申请日：2020-01-31
发明人： Insun PARK , Myongchun KOH , Dongyoung KIM , Jinah SEO
IPC分类号： H01M10/0567 , H01M10/0568 , H01M10/0569 , H01M10/0525 , H01M4/525 , C07C317/08 , C07F9/6574 , C07F5/04 , C07C309/66 , C07C309/65
摘要： An electrolyte including: a lithium salt, a non-aqueous solvent, an alkyl sulfonate compound represented by Formula 2, and an unsaturated sulfone compound represented by Formula 3: wherein, in Formula 2, Q1 and Q2 are each independently a substituted or unsubstituted C1-C20 alkyl group, and in Formula 3, Q3 and Q4 are each independently a group represented by -(L1)-(R1), a vinyl group, an allyl group, or a substituted or unsubstituted C1-C20 alkyl group, and at least one of Q3 or Q4 is a group represented by -(L1)-(R1), a vinyl group, or an allyl group, Li is a substituted or unsubstituted C2-C20 alkenylene group or a substituted or unsubstituted C2-C20 alkynylene group, and Ri is hydrogen or a substituted or unsubstituted C2-C20 alkyl group.
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公开(公告)号：US20240276743A1
公开(公告)日：2024-08-15
申请号：US18423560
申请日：2024-01-26
发明人： Dong-Seok LEEM , Insun PARK , Rae Sung KIM , Sangdong KIM , Sang Ho PARK
CPC分类号： H10K30/85 , H10K30/87 , H10K39/32 , H10K85/211 , H10K85/30 , H10K85/622 , H10K85/6572 , H10K2101/30
摘要： An infrared photodiode includes an anode, a cathode, a photoelectric conversion layer between the anode and the cathode and including an infrared absorbing material, and a first auxiliary layer between the anode and the photoelectric conversion layer and a second auxiliary layer between the cathode and the photoelectric conversion layer. The first auxiliary layer and the second auxiliary layer each independently include an electron transport material that is configured to facilitate electron introduction, and/or facility electron transport, and/or inhibit hole movement. A sensor may include the infrared photodiode. An electronic device may include the infrared photodiode.
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公开(公告)号：US20240074313A1
公开(公告)日：2024-02-29
申请号：US18449152
申请日：2023-08-14
发明人： Sangdong KIM , Sang Ho PARK , Rae Sung KIM , Insun PARK , Dong-Seok LEEM
CPC分类号： H10K85/658 , H10K39/32 , H10K39/501 , H10K85/653 , H10K85/6574 , H10K39/621
摘要： A compound represented by Chemical Formula 1, and near-infrared absorbing/blocking films, photoelectric devices, organic sensors, and electronic devices including the compound are provided:
wherein, in Chemical Formula 1, X1 to X4, and R1 to R9 are the same as defined in the detailed description.-
公开(公告)号：US20220131098A1
公开(公告)日：2022-04-28
申请号：US17509451
申请日：2021-10-25
发明人： Dong-Seok LEEM , Rae Sung KIM , Ohkyu KWON , Changki KIM , Insun PARK
摘要： A sensor includes first and second electrodes, and an infrared photoelectric conversion layer between the first and second electrodes, the infrared photoelectric conversion layer being configured to absorb light in at least a portion of an infrared wavelength spectrum and convert the absorbed light to an electrical signal. The infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in an infrared wavelength spectrum, a second material forming a pn junction with the first material, and a third material having an energy band gap greater than the energy band gap of the first material by greater than or equal to about 1.0 eV. The first material, the second material, and the third material are different from each other, and each of the first material, the second material, and the third material is a non-polymeric material.
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10.发明公开公开(公告)号：US20240237529A1
公开(公告)日：2024-07-11
申请号：US18515647
申请日：2023-11-21
发明人： Sangdong KIM , Ohkyu KWON , Rae Sung KIM , Sang Ho PARK , Insun PARK , Duck-hyung LEE , Dong-Seok LEEM , Chan-ju JEONG , Eun-gyeong CHOI , Mi-hyeon CHOO
CPC分类号： H10K85/6576 , C07C25/22 , C07D339/06 , H10K85/615 , H10K85/623 , H10K85/624 , C07C2603/52 , C07C2603/54 , H10K30/30 , H10K30/40 , H10K39/32
摘要： Provided are a compound represented by Chemical Formula 1, a photoelectric device, an image sensor, and an electronic device including the same.
In Chemical Formula 1, the definition of each substituent is as described in the specification.
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